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Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Applied physics letters, 2022-05, Vol.120 (21)

2022

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Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

Applied physics letters, 2024-08, Vol.125 (7)

2024

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The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning

Applied physics letters, 2019-12, Vol.115 (23)

2019

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Electrical and physical characterization of the Al2O3/ p -GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments

Applied physics letters, 2014-10, Vol.105 (16)

2014

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Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5559-5564

2021

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MISHEMT intrinsic voltage gain under multiple channel output characteristics

Semiconductor science and technology, 2023-11, Vol.38 (11), p.115004

2023

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Experimental study of MISHEMT from 450 K down to 200 K for analog applications

Solid-state electronics, 2023-10, Vol.208, p.108742, Article 108742

2023

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Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n + (In)GaN Source/Drain Layers for Radio Frequency Transistors

Physica status solidi. A, Applications and materials science, 2024-06

2024

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Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2024-08, p.1-10

2024

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Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

Micromachines (Basel), 2024-07, Vol.15 (8), p.951

2024

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Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz

2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, 2024, p.948-951

2024

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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2180-2187

2022

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Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity

IEEE microwave and wireless technology letters (Print), 2024-03, Vol.34 (3), p.298-301

2024

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A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2023, p.152-155

2023

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mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.24-27

2023

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RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

International journal of microwave and wireless technologies, 2023-07, Vol.15 (6), p.983-992

2023

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Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.910-913

2022

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Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.384-387

2022

Volltextzugriff (PDF)

Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments

Applied physics letters, 2014-10, Vol.105 (16)

2014

Volltextzugriff (PDF)

The development of planar high-k/iii-v p-channel mosfets for post-silicon cmos

Peralagu, Uthayasankaran

2016

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CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

2021 International Conference on IC Design and Technology (ICICDT), 2021, p.1-4

2021

Volltextzugriff (PDF)

Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K

2023 37th Symposium on Microelectronics Technology and Devices (SBMicro), 2023, p.1-3

2023

Volltextzugriff (PDF)

Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

2021 16th European Microwave Integrated Circuits Conference (EuMIC), 2022, p.30-33

2022

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Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning

Electrical and physical characterization of the Al2O3/ p -GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments

Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics

MISHEMT intrinsic voltage gain under multiple channel output characteristics

Experimental study of MISHEMT from 450 K down to 200 K for analog applications

Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n + (In)GaN Source/Drain Layers for Radio Frequency Transistors

Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs

mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments

The development of planar high-k/iii-v p-channel mosfets for post-silicon cmos

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K

Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

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