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Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors

IEEE electron device letters, 2007-03, Vol.28 (3), p.198-200

2007

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Boron pocket and channel deactivation in nMOS transistors with SPER junctions

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.71-77

2006

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Studies of implanted boron emitters for solar cell applications

Progress in photovoltaics, 2012-01, Vol.20 (1), p.106-110

2012

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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Solid-state electronics, 2009-07, Vol.53 (7), p.760-766

2009

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Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Applied physics letters, 2005-07, Vol.87 (3), p.031915-031915-3

2005

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Multi-gate devices for the 32nm technology node and beyond

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007, p.143-146

2007

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Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

Solid-state electronics, 2007-11, Vol.51 (11), p.1432-1436

2007

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Accurate electrical activation characterization of CMOS ultra-shallow profiles

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.166-173

2004

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First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Photoluminescence from Si:Er under front and backside excitation

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-04, Vol.81 (1), p.59-61

2001

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Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions

MRS proceedings, 2004, Vol.810, Article C3.6

2004

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Multi-gate devices for the 32nm technology node and beyond

Solid-state electronics, 2008-09, Vol.52 (9), p.1291-1296

2008

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Nuclear conversion of 195AuFe into 195PtFe centers in silicon: observations by magnetic resonance

Solid state communications, 2002-12, Vol.124 (10), p.397-402

2002

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Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.334-337

2008

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(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers

MRS proceedings, 2004, Vol.809, Article B9.5.1/C9.5

2004

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Confinement effects on phosphorus donors embedded in silicon nanocrystals

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.938-943

1999

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Superior N- and PMOSFET scalability using carbon co-implantation and spike annealing

2006 European Solid-State Device Research Conference, 2006, p.355-358

2006

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The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

MRS proceedings, 2004, Vol.809, Article B9.6.1/C9.6

2004

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Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals

physica status solidi (b), 1998-12, Vol.210 (2), p.631-634

1998

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Gatestacks for scalable high-performance FinFETs

2007 IEEE International Electron Devices Meeting, 2007, p.681-684

2007

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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Alteration of band structure in Si nanocrystals

Materials Science & Engineering C, 2001, Vol.15 (1), p.273-275

2001

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Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.30-31

2008

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Channel engineering towards a full low temperature process solution for the 45 nm technology node [NMOS transistors]

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850), 2004, p.225-228

2004

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Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.971-974

2004

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Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors

Boron pocket and channel deactivation in nMOS transistors with SPER junctions

Studies of implanted boron emitters for solar cell applications

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Multi-gate devices for the 32nm technology node and beyond

Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

Accurate electrical activation characterization of CMOS ultra-shallow profiles

First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling

Photoluminescence from Si:Er under front and backside excitation

Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions

Multi-gate devices for the 32nm technology node and beyond

Nuclear conversion of 195AuFe into 195PtFe centers in silicon: observations by magnetic resonance

Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers

Confinement effects on phosphorus donors embedded in silicon nanocrystals

Superior N- and PMOSFET scalability using carbon co-implantation and spike annealing

The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals

Gatestacks for scalable high-performance FinFETs

Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

Alteration of band structure in Si nanocrystals

Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

Channel engineering towards a full low temperature process solution for the 45 nm technology node [NMOS transistors]

Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control

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