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The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Journal of applied physics, 2024-04, Vol.135 (13)

2024

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Bacteria concentration using a membrane type insulator-based dielectrophoresis in a plastic chip

Electrophoresis, 2009-09, Vol.30 (18), p.3153-3159

2009

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Clinical evaluation of micro-scale chip-based PCR system for rapid detection of hepatitis B virus

Biosensors & bioelectronics, 2006-05, Vol.21 (11), p.2161-2169

2006

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Characterizing HfO 2 -Based Ferroelectric Tunnel Junction in Cryogenic Temperature

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5948-5951

2022

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Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5948

2022

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Characterizing HfO } -Based Ferroelectric Tunnel Junction in Cryogenic Temperature

IEEE transactions on electron devices, 2022, p.1-4

2022

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World-to-chip microfluidic interface with built-in valves for multichamber chip-based PCR assays

Lab on a chip, 2005-01, Vol.5 (8), p.845-850

2005

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A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage

IEEE electron device letters, 2023-02, Vol.44 (2), p.257-260

2023

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Interfacial Oxide Layer Scavenging in Ferroelectric Hf 0.5 Zr 0.5 O 2 -Based MOS Structures With Ge Channel for Reduced Write Voltages

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4479-4483

2023

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Material choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications

IEEE electron device letters, 2024-08, p.1-1

2024

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Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4479-4483

2023

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Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

ACS applied materials & interfaces, 2022-09, Vol.14 (38), p.43897-43906

2022

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Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors

IEEE journal of the Electron Devices Society, 2024-07, Vol.12, p.1-1

2024

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Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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Automated nucleic acids purification from fecal samples on a microfluidic cartridge

BioChip Journal, 2017, 11(1), , pp.76-88

2017

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Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

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A world-to-chip microfluidic interconnection technology with dual functions of sample injection and sealing for a multichamber micro PCR chip

18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005, 2005, p.714-717

2005

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Particle temperature and flue gas emission of a burning single pellet in air and oxy-fuel combustion

Combustion and flame, 2020-03, Vol.213, p.156-171

2020

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The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Bacteria concentration using a membrane type insulator-based dielectrophoresis in a plastic chip

Clinical evaluation of micro-scale chip-based PCR system for rapid detection of hepatitis B virus

Characterizing HfO 2 -Based Ferroelectric Tunnel Junction in Cryogenic Temperature

Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature

Characterizing HfO } -Based Ferroelectric Tunnel Junction in Cryogenic Temperature

World-to-chip microfluidic interface with built-in valves for multichamber chip-based PCR assays

A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage

Interfacial Oxide Layer Scavenging in Ferroelectric Hf 0.5 Zr 0.5 O 2 -Based MOS Structures With Ge Channel for Reduced Write Voltages

Material choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications

Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages

Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions

Automated nucleic acids purification from fecal samples on a microfluidic cartridge

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation

Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications

Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications

A world-to-chip microfluidic interconnection technology with dual functions of sample injection and sealing for a multichamber micro PCR chip

Particle temperature and flue gas emission of a burning single pellet in air and oxy-fuel combustion

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