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Barrier-Layer Scaling of InAlN/GaN HEMTs

IEEE electron device letters, 2008-05, Vol.29 (5), p.422-425

2008

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IEEE_Xplore

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6328-6344

2007

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Leakage mechanisms in InAlN based heterostructures

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Small-signal characteristics of AlInN/GaN HEMTs

Electronics letters, 2006, Vol.42 (13), p.779-780

2006

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Characterization of deep levels in n-GaN by combined capacitance transient techniques

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.572-577

2005

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Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Electronics letters, 2007, Vol.43 (5), p.309-311

2007

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Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Electronics letters, 2008, Vol.44 (11), p.696-698

2008

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Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)

Journal of applied physics, 2008, Vol.103 (9), p.093714

2008

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Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs

Journal of materials science. Materials in electronics, 1999-07, Vol.10 (5-6), p.419-423

1999

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Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy

Applied physics letters, 1987-06, Vol.50 (24), p.1730-1732

1987

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Feasibility and acceptability of rapid HIV test screening (DEPIVIH) by French family physicians

Médecine et maladies infectieuses, 2012-11, Vol.42 (11), p.553-560

2012

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Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Journal of applied physics, 2011-03, Vol.109 (6), p.063720-063720-8

2011

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Comment on “Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors” [J. Appl. Phys. 91 , 3318 (2002)]

Journal of applied physics, 2002-10, Vol.92 (8), p.4840-4841

2002

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Evidence for screening effects on the 1/ f current noise in GaAs/AlGaAs modulation doped field effect transistors

Journal of applied physics, 1996-08, Vol.80 (3), p.1583-1593

1996

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Low-frequency noise properties of selectively dry etched InP HEMT's

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1219-1225

1998

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IEEE_Xplore

Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors

Applied physics letters, 1999-06, Vol.74 (25), p.3818-3820

1999

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Reduction of the effects of InGaAs alloy disorder by using InAs/GaAs superlattices as the conduction channel in modulation-doped heterostructures

Solid state communications, 1996, Vol.97 (1), p.11-15

1996

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Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

Journal of applied physics, 1998-06, Vol.83 (12), p.7537-7541

1998

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Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Electronics letters, 2007-03, Vol.43, p.309-311

2007

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MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels

Microelectronic engineering, 1991, Vol.15 (1), p.573-576

1991

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Barrier-Layer Scaling of InAlN/GaN HEMTs

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Leakage mechanisms in InAlN based heterostructures

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Small-signal characteristics of AlInN/GaN HEMTs

Characterization of deep levels in n-GaN by combined capacitance transient techniques

Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)

Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs

Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy

Feasibility and acceptability of rapid HIV test screening (DEPIVIH) by French family physicians

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Comment on “Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors” [J. Appl. Phys. 91 , 3318 (2002)]

Evidence for screening effects on the 1/ f current noise in GaAs/AlGaAs modulation doped field effect transistors

Low-frequency noise properties of selectively dry etched InP HEMT's

Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors

Reduction of the effects of InGaAs alloy disorder by using InAs/GaAs superlattices as the conduction channel in modulation-doped heterostructures

Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels

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