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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

Surface science, 2008-09, Vol.602 (17), p.2936-2942

2008

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Photoelectrochemical etching of n-type 4H silicon carbide

Journal of applied physics, 2004-08, Vol.96 (4), p.2311-2322

2004

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Comparative columnar porous etching studies on n-type 6H SiC crystalline faces

Physica Status Solidi (b), 2008-07, Vol.245 (7), p.1396-1403

2008

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Field effect in epitaxial graphene on a silicon carbide substrate

Applied physics letters, 2007-06, Vol.90 (25), p.253507-253507-3

2007

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Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence

Physical review. B, 2020-11, Vol.102 (20), p.205203

2020

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Fabrication and morphology of porous p -type SiC

Journal of applied physics, 2005-02, Vol.97 (4), p.044908-044908-5

2005

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Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix

Applied physics letters, 2003-10, Vol.83 (15), p.3171-3173

2003

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Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.229-233

1999

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Optical Characterization of Silicon Carbide Polytypes

Physica status solidi. A, Applied research, 1997-07, Vol.162 (1), p.5-38

1997

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Photoluminescence and transport studies of boron in 4H SiC

Journal of applied physics, 1998-06, Vol.83 (12), p.7909-7919

1998

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Surface polishing by electrochemical etching of p-type 4H SiC

Journal of applied physics, 2009-09, Vol.106 (6)

2009

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Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Journal of electronic materials, 2001-03, Vol.30 (3), p.162-169

2001

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Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Applied physics letters, 2012-03, Vol.100 (13), p.132107-132107-3

2012

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Porous Silicon Carbide as a Membrane for Implantable Biosensors

Materials science forum, 2004-01, Vol.457-460, p.1463-1466

2004

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Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition

Applied physics letters, 1995-11, Vol.67 (19), p.2833-2835

1995

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Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC

Physical review letters, 2004-01, Vol.92

2004

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Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

Journal of applied physics, 1998-09, Vol.84 (5), p.2963-2964

1998

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Nanoporous SiC: a candidate semi-permeable material for biomedical applications

Biomedical microdevices, 2004-12, Vol.6 (4), p.261-267

2004

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Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

Applied physics letters, 1994-12, Vol.65 (24), p.3120-3122

1994

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Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

Materials Science Forum, 2005-01, Vol.483-485, p.273-276

2005

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Atomic structure of the m-plane AlN/SiC interface

Journal of crystal growth, 2009-03, Vol.311 (6), p.1456-1459

2009

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Triangular Pore Formation in Highly Doped n-Type 4H SiC

Materials science forum, 2004-01, Vol.457-460, p.1467-1470

2004

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Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

Materials science forum, 2004-01, Vol.457-460, p.1457-1462

2004

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Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications

Materials science forum, 2006-10, Vol.527-529, p.751-754

2006

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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

Photoelectrochemical etching of n-type 4H silicon carbide

Comparative columnar porous etching studies on n-type 6H SiC crystalline faces

Field effect in epitaxial graphene on a silicon carbide substrate

Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence

Fabrication and morphology of porous p -type SiC

Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix

Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

Optical Characterization of Silicon Carbide Polytypes

Photoluminescence and transport studies of boron in 4H SiC

Surface polishing by electrochemical etching of p-type 4H SiC

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Porous Silicon Carbide as a Membrane for Implantable Biosensors

Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition

Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC

Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

Nanoporous SiC: a candidate semi-permeable material for biomedical applications

Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

Atomic structure of the m-plane AlN/SiC interface

Triangular Pore Formation in Highly Doped n-Type 4H SiC

Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications

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