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Materials issues and devices of α- and β-Ga2O3

Journal of applied physics, 2019-10, Vol.126 (16)

2019

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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Applied physics letters, 2023-04, Vol.122 (16)

2023

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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Applied physics letters, 2022-12, Vol.121 (26)

2022

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Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Applied physics letters, 2024-01, Vol.124 (4)

2024

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Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3

Japanese Journal of Applied Physics, 2023-08, Vol.62 (8), p.080901

2023

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Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure

Science and technology of advanced materials, 2024-12, Vol.25 (1), p.2378683

2024

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Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

Science and technology of advanced materials, 2024-12, Vol.25 (1), p.2378683

2024

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Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

Applied physics express, 2024-08, Vol.17 (8), p.86501

2024

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Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

Journal of crystal growth, 2021-12, Vol.576, p.126387, Article 126387

2021

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Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Journal of applied physics, 2014-04, Vol.115 (15)

2014

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Follistatin-like 1, a Secreted Muscle Protein, Promotes Endothelial Cell Function and Revascularization in Ischemic Tissue through a Nitric-oxide Synthase-dependent Mechanism

The Journal of biological chemistry, 2008-11, Vol.283 (47), p.32802-32811

2008

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Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

Semiconductor science and technology, 2018-01, Vol.33 (1)

2018

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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Japanese Journal of Applied Physics, 2020-11, Vol.59 (11)

2020

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Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Journal of crystal growth, 2010-12, Vol.312 (24), p.3569-3573

2010

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IR photoresponse characteristics of Mg2Ge pn-junction photodiodes fabricated by rapid thermal annealing

Journal of alloys and compounds, 2019-05, Vol.787, p.578-584

2019

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DIP2A Functions as a FSTL1 Receptor

The Journal of biological chemistry, 2010-03, Vol.285 (10), p.7127-7134

2010

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Band gaps and phonons of quasi-bulk rocksalt ScN

Physical review materials, 2024-07, Vol.8 (7), Article L071601

2024

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Homoepitaxial growth of 1ˉ02 β-Ga 2 O 3 by halide vapor phase epitaxy

Semiconductor science and technology, 2023-10, Vol.38 (10), p.105003

2023

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Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Semiconductor science and technology, 2023-10, Vol.38 (10)

2023

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Thermal and piezoelectric properties of La3Ta0.5Ga5.1Al0.4O14 (LTGA) for high temperature sensors

Journal of alloys and compounds, 2015-10, Vol.647, p.1086-1090

2015

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Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Journal of crystal growth, 2008-01, Vol.310 (1), p.5-7

2008

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Anisotropic non-plasma HCl gas etching of a (010) β-Ga 2 O 3 substrate

Applied physics express, 2023-06, Vol.16 (6), p.66501

2023

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Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga 2 O 3

Japanese Journal of Applied Physics, 2023-08, Vol.62 (8), p.80901

2023

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Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates

Journal of crystal growth, 2012-07, Vol.350 (1), p.38-43

2012

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Activin A and Follistatin-Like 3 Determine the Susceptibility of Heart to Ischemic Injury

Circulation (New York, N.Y.), 2009-10, Vol.120 (16), p.1606-1615

2009

Volltextzugriff (PDF)

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Materials issues and devices of α- and β-Ga2O3

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3

Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure

Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Follistatin-like 1, a Secreted Muscle Protein, Promotes Endothelial Cell Function and Revascularization in Ischemic Tissue through a Nitric-oxide Synthase-dependent Mechanism

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

IR photoresponse characteristics of Mg2Ge pn-junction photodiodes fabricated by rapid thermal annealing

DIP2A Functions as a FSTL1 Receptor

Band gaps and phonons of quasi-bulk rocksalt ScN

Homoepitaxial growth of 1ˉ02 β-Ga 2 O 3 by halide vapor phase epitaxy

Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Thermal and piezoelectric properties of La3Ta0.5Ga5.1Al0.4O14 (LTGA) for high temperature sensors

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Anisotropic non-plasma HCl gas etching of a (010) β-Ga 2 O 3 substrate

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga 2 O 3

Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates

Activin A and Follistatin-Like 3 Determine the Susceptibility of Heart to Ischemic Injury

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