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Freshwater turtle admissions to a wildlife hospital in South‐East Queensland, Australia over an eleven‐year period, 2010–2021

Australian veterinary journal, 2023-06, Vol.101 (6), p.258-264

2023

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Better safe than sorry

BJOG : an international journal of obstetrics and gynaecology, 2012-09, Vol.119 (10), p.1159-1161

2012

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The impact of processing on the optical absorption onset of CdTe thin-films and solar cells

Journal of applied physics, 2021-04, Vol.129 (16)

2021

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Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

Journal of crystal growth, 2015-09, Vol.425, p.245-249

2015

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Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy

Solid state communications, 2001-01, Vol.120 (11), p.429-434

2001

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Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review

Journal of materials science. Materials in electronics, 2006-02, Vol.17 (2), p.87-126

2006

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'Better safe than sorry'- better for whom?

BJOG : an international journal of obstetrics and gynaecology, 2012-11, Vol.119 (12), p.1547-1547

2012

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The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction

Canadian journal of physics, 2014-07, Vol.92 (7/8), p.857-861

2014

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Region-dependent alterations in glutamate and GABA measured by high-resolution magnetic resonance spectroscopy following acute binge inhalation of toluene in juvenile rats

Neurotoxicology and teratology, 2007-07, Vol.29 (4), p.466-475

2007

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Optical absorption in an amorphous silicon superlattice grown by molecular beam epitaxy

Solid state communications, 2002-05, Vol.122 (5), p.271-275

2002

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Optical dispersion relationships in amorphous silicon grown by molecular beam epitaxy

Journal of non-crystalline solids, 2001-09, Vol.290 (1), p.57-63

2001

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Influence of the kinetic energy of localization on the distribution of electronic states in amorphous semiconductors

Applied physics. A, Materials science & processing, 1998, Vol.66 (1), p.53-58

1998

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Social influences on cortisol and behavioral responses of preweaning, periadolescent, and adult guinea pigs

Physiology & behavior, 2002-06, Vol.76 (2), p.305-314

2002

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Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

Applied physics letters, 2006-03, Vol.88 (12)

2006

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Optical properties of hydrogenated amorphous carbon thin films prepared by dc saddle field plasma-enhanced chemical vapor deposition

Journal of non-crystalline solids, 2005-04, Vol.351 (8), p.736-740

2005

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Effects of bandwidth limitations on the localized state distribution calculated from transient photoconductivity data

Journal of applied physics, 1998-05, Vol.83 (9), p.4782-4787

1998

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Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

MRS proceedings, 2002, Vol.715, Article A19.1

2002

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Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis

Journal of electronic materials, 2003-05, Vol.32 (5), p.327-334

2003

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Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon: A transient photocurrent analysis

Solid state communications, 1998, Vol.105 (4), p.239-242

1998

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Monte Carlo simulation of electron transport in wurtzite aluminum nitride

Solid state communications, 1998-03, Vol.105 (10), p.621-626

1998

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On defining the optical gap of an amorphous semiconductor : an empirical calibration for the case of hydrogenated amorphous silicon

Solid state communications, 1999-01, Vol.110 (5), p.281-286

1999

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On the relationship between the distribution of electronic states and the optical absorption spectrum in amorphous semiconductors

Solid state communications, 1999-02, Vol.109 (9), p.589-594

O’Leary, Stephen Karrer

1999

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Molecular Beam Epitaxially Deposited Amorphous Silicon

MRS proceedings, 2000, Vol.609, Article A5.1

2000

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Potential performance of indium-nitride-based devices

Applied physics letters, 2006-04, Vol.88 (15), p.152113-152113-3

2006

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Transient electron transport in wurtzite GaN, InN, and AlN

Journal of applied physics, 1999-06, Vol.85 (11), p.7727-7734

1999

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Freshwater turtle admissions to a wildlife hospital in South‐East Queensland, Australia over an eleven‐year period, 2010–2021

Better safe than sorry

The impact of processing on the optical absorption onset of CdTe thin-films and solar cells

Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy

Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review

'Better safe than sorry'- better for whom?

The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction

Region-dependent alterations in glutamate and GABA measured by high-resolution magnetic resonance spectroscopy following acute binge inhalation of toluene in juvenile rats

Optical absorption in an amorphous silicon superlattice grown by molecular beam epitaxy

Optical dispersion relationships in amorphous silicon grown by molecular beam epitaxy

Influence of the kinetic energy of localization on the distribution of electronic states in amorphous semiconductors

Social influences on cortisol and behavioral responses of preweaning, periadolescent, and adult guinea pigs

Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

Optical properties of hydrogenated amorphous carbon thin films prepared by dc saddle field plasma-enhanced chemical vapor deposition

Effects of bandwidth limitations on the localized state distribution calculated from transient photoconductivity data

Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis

Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon: A transient photocurrent analysis

Monte Carlo simulation of electron transport in wurtzite aluminum nitride

On defining the optical gap of an amorphous semiconductor : an empirical calibration for the case of hydrogenated amorphous silicon

On the relationship between the distribution of electronic states and the optical absorption spectrum in amorphous semiconductors

Molecular Beam Epitaxially Deposited Amorphous Silicon

Potential performance of indium-nitride-based devices

Transient electron transport in wurtzite GaN, InN, and AlN

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