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Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Journal of physics. D, Applied physics, 2017-11, Vol.50 (48), p.485106

2017

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In-line characterization of ultrathin transition metal dichalcogenides using X-ray fluorescence and X-ray photoelectron spectroscopy

Spectrochimica acta. Part B: Atomic spectroscopy, 2020-04, Vol.166, p.105788, Article 105788

2020

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Understanding and controlling Ga contamination in InAlN barrier layers

Journal of crystal growth, 2019-02, Vol.507, p.139-142

2019

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Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials

Journal of applied physics, 2022-11, Vol.132 (20)

2022

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New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission

Faraday discussions, 2022-08, Vol.236, p.288-31

2022

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Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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Quantifying nitrogen in GeSbTe:N alloys

Journal of analytical atomic spectrometry, 2020-04, Vol.35 (4), p.71-712

2020

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X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories

Spectrochimica acta. Part B: Atomic spectroscopy, 2018-11, Vol.149, p.71-75

2018

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Corrigendum to “X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories” [Spectrochimica Acta Part B volume (2018) 71–75]

Spectrochimica acta. Part B: Atomic spectroscopy, 2019-10, Vol.160, p.105691, Article 105691

2019

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Elemental depth profiling in transparent conducting oxide thin film by X-ray reflectivity and grazing incidence X-ray fluorescence combined analysis

Spectrochimica acta. Part B: Atomic spectroscopy, 2017-09, Vol.135, p.22-28

2017

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Quantitative depth-profile analysis of transition metal nitride materials with combined grazing-incidence X-ray fluorescence and X-ray reflectometry analysis

Spectrochimica acta. Part B: Atomic spectroscopy, 2020-09, Vol.171, p.105926, Article 105926

2020

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Systematic combination of X-ray reflectometry and spectroscopic ellipsometry: A powerful technique for reliable in-fab metrology

Thin solid films, 2011-02, Vol.519 (9), p.2782-2786

2011

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Grazing incident X-ray fluorescence combined with X-ray reflectometry metrology protocol of telluride-based films using in-lab and synchrotron instruments

Spectrochimica acta. Part B: Atomic spectroscopy, 2018-11, Vol.149, p.143-149

2018

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Grazing-incidence X-ray fluorescence analysis of thin chalcogenide materials deposited on Bragg mirrors

Spectrochimica acta. Part B: Atomic spectroscopy, 2020-06, Vol.168, p.105864, Article 105864

2020

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The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

Materialia, 2022-03, Vol.21 (101345), p.101345, Article 101345

2022

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Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: An X-ray photoelectron study

Applied surface science, 2021-01, Vol.536, p.147703, Article 147703

2021

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Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.225-228

2022

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Optical metrology of thick photoresist process for advanced 3D applications

Thin solid films, 2014-11, Vol.571, p.609-614

2014

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Sputtered niobium pentoxide layers for optical applications

Thin solid films, 2024-07, Vol.800, p.140424, Article 140424

2024

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Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Semiconductor science and technology, 2007-03, Vol.22 (3), p.237-244

2007

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Assessing advanced methods in XPS and HAXPES for determining the thicknesses of high-k oxide materials: From ultra-thin layers to deeply buried interfaces

Applied surface science, 2023-01, Vol.609, p.155317, Article 155317

2023

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Applications of X-Ray Characterization for Advanced Materials in the Electronics Industry

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2010-05, Vol.41 (5), p.1167-1173

2010

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Optical properties determination of Fully Depleted Silicon On Insulator (FDSOI) substrates by ellipsometry

2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2015, p.195-200

2015

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Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies

Solid-state electronics, 2011-05, Vol.59 (1), p.8-12

2011

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Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

Microelectronics and reliability, 2020-11, Vol.114, p.113823, Article 113823

2020

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Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

In-line characterization of ultrathin transition metal dichalcogenides using X-ray fluorescence and X-ray photoelectron spectroscopy

Understanding and controlling Ga contamination in InAlN barrier layers

Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials

New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Quantifying nitrogen in GeSbTe:N alloys

X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories

Corrigendum to “X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories” [Spectrochimica Acta Part B volume (2018) 71–75]

Elemental depth profiling in transparent conducting oxide thin film by X-ray reflectivity and grazing incidence X-ray fluorescence combined analysis

Quantitative depth-profile analysis of transition metal nitride materials with combined grazing-incidence X-ray fluorescence and X-ray reflectometry analysis

Systematic combination of X-ray reflectometry and spectroscopic ellipsometry: A powerful technique for reliable in-fab metrology

Grazing incident X-ray fluorescence combined with X-ray reflectometry metrology protocol of telluride-based films using in-lab and synchrotron instruments

Grazing-incidence X-ray fluorescence analysis of thin chalcogenide materials deposited on Bragg mirrors

The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: An X-ray photoelectron study

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement

Optical metrology of thick photoresist process for advanced 3D applications

Sputtered niobium pentoxide layers for optical applications

Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Assessing advanced methods in XPS and HAXPES for determining the thicknesses of high-k oxide materials: From ultra-thin layers to deeply buried interfaces

Applications of X-Ray Characterization for Advanced Materials in the Electronics Industry

Optical properties determination of Fully Depleted Silicon On Insulator (FDSOI) substrates by ellipsometry

Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies

Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

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