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Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.823-829

2024

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Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach-Zehnder Modulators for Space-Based Optical Communications

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.736-743

2024

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Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

IEEE transactions on nuclear science, 2024-08, Vol.71 (8), p.1691-1698

2024

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Single-Event Transients in a Commercially Available, Integrated Germanium Photodiode for Silicon Photonic Systems

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.527-533

2022

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Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.816-822

2024

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Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.2116-2124

2023

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The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1797-1804

2023

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New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.81-90

2020

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Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.611-619

2023

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Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1079-1084

2022

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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.71-80

2020

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Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.359-367

2019

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Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.91-98

2020

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Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.282-289

2022

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Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.260-267

2020

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SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.399-406

2018

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How to Consider SEEs When Designing a SiGe Low-Noise Amplifier-An Overview

IEEE transactions on nuclear science, 2024-08, Vol.71 (8), p.1663-1674

2024

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Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics

Optics express, 2019-12, Vol.27 (26), p.37652-37666

2019

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Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-4

2024

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Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

IEEE transactions on nuclear science, 2021-10, Vol.69 (3)

2021

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TID Testing of SiGe Microelectronics Using High-Flux 1-MeV Electrons for Europa-Surface Missions

2024 IEEE Aerospace Conference, 2024, p.1-9

2024

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The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023, p.253-256

2023

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Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach-Zehnder Modulators for Space-Based Optical Communications

Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

Single-Event Transients in a Commercially Available, Integrated Germanium Photodiode for Silicon Photonic Systems

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation

Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

How to Consider SEEs When Designing a SiGe Low-Noise Amplifier-An Overview

Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics

Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

TID Testing of SiGe Microelectronics Using High-Flux 1-MeV Electrons for Europa-Surface Missions

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs

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