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Optical studies of ferroelectric and ferroelastic domain walls

Journal of physics. Condensed matter, 2020-05, Vol.32 (18), p.183001-183001

2020

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Raman signatures of ferroic domain walls captured by principal component analysis

Journal of physics. Condensed matter, 2018-01, Vol.30 (3), p.035902-035902

2018

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Low energy electron imaging of domains and domain walls in magnesium-doped lithium niobate

Scientific reports, 2016-09, Vol.6 (1), p.33098-33098, Article 33098

2016

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Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Journal of crystal growth, 2010-09, Vol.312 (19), p.2625-2630

2010

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Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Journal of crystal growth, 2012-08, Vol.353 (1), p.1-4

2012

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Magnetic properties of the honeycomb oxide Na2Co2TeO6

Physical review. B, 2016-12, Vol.94 (21)

2016

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Temperature quenching of photoluminescence intensities in undoped and doped GaN

Journal of applied physics, 1999-10, Vol.86 (7), p.3721-3728

1999

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Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching

Applied physics letters, 2010-06, Vol.96 (23), p.231918-231918-3

2010

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Improved semipolar ( 11 2 ¯ 2 ) GaN quality using asymmetric lateral epitaxy

Applied physics letters, 2009-05, Vol.94 (19), p.191903-191903-3

2009

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Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Journal of physics. Condensed matter, 2010-09, Vol.22 (35), p.355802-355802

2010

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Control of surface potential at polar domain walls in a nonpolar oxide

Physical review materials, 2017-12, Vol.1 (7), p.74410-74410, Article 074410

2017

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Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Journal of applied physics, 2003-11, Vol.94 (10), p.6499-6507

2003

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Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth

Applied physics letters, 2011-03, Vol.98 (12), p.121916-121916-3

2011

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Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Journal of crystal growth, 2011-05, Vol.323 (1), p.161-163

2011

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Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Journal of crystal growth, 2007-12, Vol.309 (2), p.113-120

2007

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Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Nanoscale research letters, 2010-09, Vol.5 (12), p.1878-1881

2010

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Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode

Electronics letters, 2008, Vol.44 (3), p.231-232

2008

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Dense and single-phase KTaO3 ceramics obtained by spark plasma sintering

Journal of the European Ceramic Society, 2023-12, Vol.43 (16), p.7463-7470

2023

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Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Nanoscale research letters, 2010-09, Vol.5 (12), p.1878-1881

2010

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Influence of ferroelastic domain walls on thermal conductivity

Physical review. B, 2023-10, Vol.108 (14), Article 144104

2023

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Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

Journal of applied physics, 2013-04, Vol.113 (14)

2013

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Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Journal of crystal growth, 1998-06, Vol.189-190, p.97-102

1998

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Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

Journal of crystal growth, 1998-08, Vol.192 (1-2), p.73-78

1998

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Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum well

Journal of applied physics, 2013, Vol.113 (14)

2013

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Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

MRS Internet journal of nitride semiconductor research, 1998-01, Vol.3, Article e20

1998

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Optical studies of ferroelectric and ferroelastic domain walls

Raman signatures of ferroic domain walls captured by principal component analysis

Low energy electron imaging of domains and domain walls in magnesium-doped lithium niobate

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Magnetic properties of the honeycomb oxide Na2Co2TeO6

Temperature quenching of photoluminescence intensities in undoped and doped GaN

Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching

Improved semipolar ( 11 2 ¯ 2 ) GaN quality using asymmetric lateral epitaxy

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Control of surface potential at polar domain walls in a nonpolar oxide

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth

Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode

Dense and single-phase KTaO3 ceramics obtained by spark plasma sintering

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Influence of ferroelastic domain walls on thermal conductivity

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum well

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

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