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Fabrication of Cu2ZnSn(S, Se)4 thin-film solar cells by sulfurization using Cu2ZnSnSe4, NaF and KF compounds

Japanese Journal of Applied Physics, 2020-04, Vol.59, p.1

2020

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Fabrication of Cu2ZnSn(S,Se)4 thin-film solar cells by sulfurization using Cu2ZnSnSe4 and KF compounds

Japanese Journal of Applied Physics, 2019-02, Vol.58 (SB)

2019

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Polarity determination of InN by wet etching

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.773-776

2005

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The effect of substrate polarity on the growth of InN by RF-MBE

Journal of crystal growth, 2004-08, Vol.269 (1), p.155-161

2004

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Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1L), p.L230

2005

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MOCVD growth of InAsN for infrared applications

Solid-state electronics, 1997-02, Vol.41 (2), p.319-321

1997

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Growth of high-quality In-rich InGaN alloys by RF–MBE for the fabrication of InN-based quantum well structures

Journal of crystal growth, 2006-03, Vol.288 (2), p.283-288

2006

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Fabrication of Cu 2 ZnSn(S,Se) 4 thin-film solar cells by sulfurization using Cu 2 ZnSnSe 4 and KF compounds

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBF03

2019

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Fabrication of Cu 2 ZnSn(S, Se) 4 thin-film solar cells by sulfurization using Cu 2 ZnSnSe 4 , NaF and KF compounds

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGF11

2020

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Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE

MRS proceedings, 2006, Vol.955, Article 0955-I07-40

2006

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Polarity Determination of InN by Atomic Hydrogen Irradiation

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4L), p.L384

2006

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DISTRIBUTION OF THREADING DISLOCATIONS IN EPITAXIAL LATERAL OVERGROWTH GaN BY HYDRIDE VAPOR-PHASE EPITAXY USING MIXED CARRIER GAS OF H2 AND N2

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002, 2002-01, Vol.41 (1), p.75-76

2002

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Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.177-181

2007

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Optical emission spectroscopy during InN growth by ECR–MBE

Journal of crystal growth, 2005-02, Vol.275 (1), p.e1073-e1077

2005

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Epitaxial lateral overgrowth of GaN on selected-area Si(1 1 1) substrate with nitrided Si mask

Journal of crystal growth, 2003-02, Vol.248, p.573-577

2003

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Growth of InAs on GaAs(1 0 0) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals

Journal of crystal growth, 2003-04, Vol.250 (3), p.290-297

2003

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Mg-doped N-polar InN Grown by RF-MBE

MRS proceedings, 2006, Vol.955, Article 0955-I08-01

2006

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Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE

MRS proceedings, 2004, Vol.831, Article E4.2

2004

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Growth of InNAs on GaAs(1 0 0) substrates by molecular-beam epitaxy

Journal of crystal growth, 1998-06, Vol.189-190, p.471-475

1998

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Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H 2 and N 2

Japanese Journal of Applied Physics, 2002-01, Vol.41 (Part 1, No. 1), p.75-76

2002

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Recent development of InN RF-MBE growth and its structural and property characterization

Physica status solidi. C, 2004-04, Vol.1 (6), p.1487-1495

2004

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Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE

MRS proceedings, 2003, Vol.798, Article Y10.71

2003

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Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

MRS proceedings, 2003, Vol.798, Article Y12.1

2003

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MOVPE growth and n-type conductivity control of high-quality Si-doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer

Physica status solidi. C, 2003-12 (7), p.2128-2131

2003

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MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al 0.5 Ga 0.5 N using epitaxial AlN as an underlying layer

Physica status solidi. C, 2003-12 (7), p.2128-2131

2003

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Fabrication of Cu2ZnSn(S, Se)4 thin-film solar cells by sulfurization using Cu2ZnSnSe4, NaF and KF compounds

Fabrication of Cu2ZnSn(S,Se)4 thin-film solar cells by sulfurization using Cu2ZnSnSe4 and KF compounds

Polarity determination of InN by wet etching

The effect of substrate polarity on the growth of InN by RF-MBE

Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy

MOCVD growth of InAsN for infrared applications

Growth of high-quality In-rich InGaN alloys by RF–MBE for the fabrication of InN-based quantum well structures

Fabrication of Cu 2 ZnSn(S,Se) 4 thin-film solar cells by sulfurization using Cu 2 ZnSnSe 4 and KF compounds

Fabrication of Cu 2 ZnSn(S, Se) 4 thin-film solar cells by sulfurization using Cu 2 ZnSnSe 4 , NaF and KF compounds

Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE

Polarity Determination of InN by Atomic Hydrogen Irradiation

DISTRIBUTION OF THREADING DISLOCATIONS IN EPITAXIAL LATERAL OVERGROWTH GaN BY HYDRIDE VAPOR-PHASE EPITAXY USING MIXED CARRIER GAS OF H2 AND N2

Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN

Optical emission spectroscopy during InN growth by ECR–MBE

Epitaxial lateral overgrowth of GaN on selected-area Si(1 1 1) substrate with nitrided Si mask

Growth of InAs on GaAs(1 0 0) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals

Mg-doped N-polar InN Grown by RF-MBE

Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE

Growth of InNAs on GaAs(1 0 0) substrates by molecular-beam epitaxy

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H 2 and N 2

Recent development of InN RF-MBE growth and its structural and property characterization

Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE

Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

MOVPE growth and n-type conductivity control of high-quality Si-doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer

MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al 0.5 Ga 0.5 N using epitaxial AlN as an underlying layer

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