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Full C-band external cavity wavelength tunable laser using a liquid-Crystal-based tunable mirror

IEEE photonics technology letters, 2005-03, Vol.17 (3), p.681-683

2005

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Wavelength-selectable light sources fabricated using advanced microarray-selective epitaxy

IEEE photonics technology letters, 2004-07, Vol.16 (7), p.1619-1621

2004

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Wavelength-selectable microarray light sources for wide-band DWDM applications

IEEE journal of selected topics in quantum electronics, 2002-11, Vol.8 (6), p.1341-1348

2002

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Wideband External Cavity Wavelength-Tunable Laser Utilizing a Liquid-Crystal-Based Mirror and an Intracavity Etalon

Journal of lightwave technology, 2007-08, Vol.25 (8), p.2226-2232

2007

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Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layer

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2094-2097

2007

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Wavelength-selectable microarray light sources for S-, C-, and L-band WDM systems

IEEE photonics technology letters, 2003-07, Vol.15 (7), p.903-905

2003

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Over 1000 mW single mode operation of planar inner stripe blue-violet laser diodes

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1824-1828

2006

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Over 1W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer

Electronics letters, 2004-08, Vol.40 (17), p.1063-1064

2004

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Over 1 W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer

Electronics letters, 2004-08, Vol.40 (17), p.1063

2004

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A compact external cavity wavelength tunable laser without an intracavity etalon

IEEE photonics technology letters, 2006-05, Vol.18 (10), p.1191-1193, Article 1191-1193

2006

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High power with low electric power consumption active multi-mode-interferometer laser diode for fibre-amplifier

Electronics letters, 2002-05, Vol.38 (11), p.517-519

2002

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Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0 0 0 1) surface and the initial growth of GaN and AlN

Applied surface science, 2005-04, Vol.242 (3), p.428-436

2005

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Epitaxial growth of n- and p-type ZnCdSe on InP

Journal of crystal growth, 1998-02, Vol.184-185 (1-2), p.450-454

Naniwae, K

1998

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Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limit

IEEE journal of quantum electronics, 1993-03, Vol.29 (3), p.885-895

1993

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Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.126-129

2004

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Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)

Materials science forum, 2000-05, Vol.338-342, p.353-356

2000

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Over 1W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer

Electronics letters, 2004-08, Vol.40 (17), p.1-1

2004

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Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride

Journal of crystal growth, 2003-02, Vol.248, p.400-404

2003

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High power with low electric power consumption active multi-mode-interferometer laser diode for fibre-amplifier

Electronics letters, 2002-05, Vol.38 (11), p.1-1

2002

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Molecular beam epitaxial growth and optical properties of lattice-matched MgxZn1−xSeyTe1−y alloys on InP substrates

Applied physics letters, 1999-06, Vol.74 (26), p.3984-3986

1999

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Strain dependence of the linewidth enhancement factor in long-wavelength tensile- and compressive-strained quantum-well lasers

IEEE photonics technology letters, 1993-09, Vol.5 (9), p.983-986

1993

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Growth of single crystal GaN substrate using hydride vapor phase epitaxy

Journal of crystal growth, 1990, Vol.99 (1), p.381-384

1990

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High-frequency modulation characteristics in 1.5 μm compressively strained multiquantum well lasers with large number of wells

Electronics letters, 1992, Vol.28 (15), p.1456-1457

1992

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1 V and Stable Dynamic Operation of Laser Diode Using Active Multi-Mode Interferometer

Japanese Journal of Applied Physics, 2006-01, Vol.45 (1L), p.L14

2006

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Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasers

Electronics letters, 1993, Vol.29 (7), p.579-581

1993

Volltextzugriff (PDF)

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Full C-band external cavity wavelength tunable laser using a liquid-Crystal-based tunable mirror

Wavelength-selectable light sources fabricated using advanced microarray-selective epitaxy

Wavelength-selectable microarray light sources for wide-band DWDM applications

Wideband External Cavity Wavelength-Tunable Laser Utilizing a Liquid-Crystal-Based Mirror and an Intracavity Etalon

Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layer

Wavelength-selectable microarray light sources for S-, C-, and L-band WDM systems

Over 1000 mW single mode operation of planar inner stripe blue-violet laser diodes

Over 1W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer

Over 1 W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer

A compact external cavity wavelength tunable laser without an intracavity etalon

High power with low electric power consumption active multi-mode-interferometer laser diode for fibre-amplifier

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0 0 0 1) surface and the initial growth of GaN and AlN

Epitaxial growth of n- and p-type ZnCdSe on InP

Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limit

Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)

Over 1W output power with low driving voltage 14xx-nm pump laser diodes using active multimode-interferometer

Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride

High power with low electric power consumption active multi-mode-interferometer laser diode for fibre-amplifier

Molecular beam epitaxial growth and optical properties of lattice-matched MgxZn1−xSeyTe1−y alloys on InP substrates

Strain dependence of the linewidth enhancement factor in long-wavelength tensile- and compressive-strained quantum-well lasers

Growth of single crystal GaN substrate using hydride vapor phase epitaxy

High-frequency modulation characteristics in 1.5 μm compressively strained multiquantum well lasers with large number of wells

1 V and Stable Dynamic Operation of Laser Diode Using Active Multi-Mode Interferometer

Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasers

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