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InN nanocolumns grown by molecular beam epitaxy and their luminescence properties

Journal of crystal growth, 2015-11, Vol.430, p.93-97

2015

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Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation

Journal of crystal growth, 2013-08, Vol.377, p.123-126

2013

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High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (11), Article 115202

2013

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Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

Thin solid films, 2014-11, Vol.571, p.384-388

2014

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Mg doped InN and confirmation of free holes in InN

Applied physics letters, 2011-01, Vol.98 (4), p.042104-042104-3

2011

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Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Applied physics letters, 2013-01, Vol.102 (3)

2013

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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Applied physics letters, 2010-02, Vol.96 (8), p.081907-081907-3

2010

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Raman-scattering study of the InGaN alloy over the whole composition range

Journal of applied physics, 2005-07, Vol.98 (1), p.013511-013511-5

2005

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Universality of electron accumulation at wurtzite c - and a -plane and zinc-blende InN surfaces

Applied physics letters, 2007-08, Vol.91 (9), p.092101-092101-3

2007

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Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

Applied physics letters, 2014-12, Vol.105 (23)

2014

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Effect of Mg doping on the structural and free-charge carrier properties of InN films

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

Applied physics letters, 2009-11, Vol.95 (20), p.202103-202103-3

2009

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Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Journal of applied physics, 2010-10, Vol.108 (7), p.073529-073529-10

2010

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Growth and characterization of N-polar and In-polar InN films by RF-MBE

Journal of crystal growth, 2009-05, Vol.311 (10), p.2780-2782

2009

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Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.796-800

2002

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Coexistence of Mn2+ and Mn3+ in ferromagnetic GaMnN

Journal of physics. Condensed matter, 2006-05, Vol.18 (19), p.4615-4621

2006

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Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon–plasmon coupled modes

Journal of physics. Condensed matter, 2009-10, Vol.21 (41), p.415801-415801 (6)

2009

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PN junction rectification in electrolyte gated Mg-doped InN

Applied physics letters, 2011-09, Vol.99 (10), p.102106-102106-3

2011

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Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Applied physics letters, 2013-10, Vol.103 (16)

2013

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P-type InGaN across the entire alloy composition range

Applied physics letters, 2013-03, Vol.102 (10)

2013

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High-pressure Raman scattering in wurtzite indium nitride

Applied physics letters, 2011-07, Vol.99 (1), p.011908-011908-3

2011

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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

Physica status solidi. A, Applications and materials science, 2012-01, Vol.209 (1), p.91-94

2012

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Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure

Applied physics letters, 2010-05, Vol.96 (20), p.201903-201903-3

2010

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Photoreflectance of InN and InN:Mg layers: An evidence of Fermi level shift toward the valence band upon Mg doping in InN

Applied physics letters, 2008-09, Vol.93 (13), p.131917-131917-3

2008

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Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE

Physica Status Solidi (b), 2004-10, Vol.241 (12), p.2843-2848

2004

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InN nanocolumns grown by molecular beam epitaxy and their luminescence properties

Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

Mg doped InN and confirmation of free holes in InN

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Raman-scattering study of the InGaN alloy over the whole composition range

Universality of electron accumulation at wurtzite c - and a -plane and zinc-blende InN surfaces

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

Effect of Mg doping on the structural and free-charge carrier properties of InN films

Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Growth and characterization of N-polar and In-polar InN films by RF-MBE

Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE

Coexistence of Mn2+ and Mn3+ in ferromagnetic GaMnN

Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon–plasmon coupled modes

PN junction rectification in electrolyte gated Mg-doped InN

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

P-type InGaN across the entire alloy composition range

High-pressure Raman scattering in wurtzite indium nitride

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure

Photoreflectance of InN and InN:Mg layers: An evidence of Fermi level shift toward the valence band upon Mg doping in InN

Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE

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