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Rezension: Neuhaus, Laura (2019): Linguistik der Litotes im Deutschen – Syntax, Semantik und Pragmatik einer ‚nicht uninteressanten‘ Redefigur. Berlin: De Gruyter

Linguistische Berichte, 2022-11, Vol.2022 (272), p.97-102

Mroczynski, Robert

2022

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Strong second-harmonic response from semiconductor-dielectric interfaces

Applied optics (2004), 2021-02, Vol.60 (5), p.1132-1136

2021

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Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx

Solid-state electronics, 2019-09, Vol.159, p.157-164

2019

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50 Jahre Speech-Acts: Bilanz und Perspektiven

1, 2019

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Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

Materials, 2021-09, Vol.14 (18), p.5395

2021

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Characterization of dielectric layers grown at low temperature by atomic layer deposition

Thin solid films, 2015-02, Vol.577, p.97-102

2015

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Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

physica status solidi (b), 2018-10, Vol.255 (10), p.n/a

2018

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Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide Films

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (18), p.n/a

2019

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Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Materials, 2021-11, Vol.14 (23), p.7364

2021

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Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO x N y ) Thin Films

Materials, 2023-03, Vol.16 (6), p.2539

2023

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Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices

Microelectronic engineering, 2020-05, Vol.228, p.111332, Article 111332

2020

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Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks

Microelectronic engineering, 2017-06, Vol.178, p.116-121

2017

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Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma

Physica status solidi. PSS-RRL. Rapid research letters, 2018-08, Vol.12 (8), p.n/a

2018

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Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Nanomaterials (Basel, Switzerland), 2020-11, Vol.10 (12), p.2387

2020

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Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

Applied surface science, 2014-05, Vol.301, p.28-33

2014

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Optimization of Ultra-Thin Pulsed-DC Magnetron Sputtered Aluminum Films for the Technology of Hyperbolic Metamaterials

Crystals (Basel), 2020-05, Vol.10 (5), p.384

2020

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Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-01, Vol.33 (1)

2015

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Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures

Microelectronic engineering, 2015-11, Vol.147, p.349-353

2015

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Sprachliche Grenzziehungspraktiken: Analysefelder und Perspektiven

1, 2023

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Gesprächslinguistik: Eine Einführung

Mroczynski, Robert

2014

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Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Applied surface science, 2012-08, Vol.258 (21), p.8366-8370

2012

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Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma

Physica status solidi. C, 2016-12, Vol.13 (10-12), p.816-821

2016

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Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO 2) layers for non-volatile semiconductor memory (NVSM) applications

Microelectronics and reliability, 2012, Vol.52 (1), p.107-111

2012

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Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-09, Vol.177 (15), p.1281-1285

2012

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Zur Herausbildung des Diskursmarker ja. Grammatikalisierung oder Pragmatikalisierung?

Zeitschrift für germanistische Linguistik, 2013-04, Vol.41 (1), p.127-152

MROCZYNSKI, Robert

2013

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Rezension: Neuhaus, Laura (2019): Linguistik der Litotes im Deutschen – Syntax, Semantik und Pragmatik einer ‚nicht uninteressanten‘ Redefigur. Berlin: De Gruyter

Strong second-harmonic response from semiconductor-dielectric interfaces

Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx

50 Jahre Speech-Acts: Bilanz und Perspektiven

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

Characterization of dielectric layers grown at low temperature by atomic layer deposition

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide Films

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO x N y ) Thin Films

Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices

Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks

Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma

Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

Optimization of Ultra-Thin Pulsed-DC Magnetron Sputtered Aluminum Films for the Technology of Hyperbolic Metamaterials

Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures

Sprachliche Grenzziehungspraktiken: Analysefelder und Perspektiven

Gesprächslinguistik: Eine Einführung

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma

Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO 2) layers for non-volatile semiconductor memory (NVSM) applications

Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

Zur Herausbildung des Diskursmarker ja. Grammatikalisierung oder Pragmatikalisierung?

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