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Optimization of ( 1 1 2 ¯ 0 ) a-plane GaN growth by MOCVD on ( 1 1 ¯ 0 2 ) r-plane sapphire

Journal of crystal growth, 2006-04, Vol.290 (1), p.166-170

2006

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Dural Tears in Spinal Burst Fractures: Predictable MR Imaging Findings

American journal of neuroradiology : AJNR, 2009-01, Vol.30 (1), p.142-146

2009

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Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Journal of applied physics, 2005-12, Vol.98 (12)

2005

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Dislocation density reduction in GaN using porous SiN interlayers

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.722-726

2005

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Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements

Applied physics letters, 2006-04, Vol.88 (14)

2006

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The Study of Cerebral Hemodynamics in the Hyperacute Stage of Fat Embolism Induced by Triolein Emulsion

American Journal of Neuroradiology, 2006-02, Vol.27 (2), p.398-401

2006

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Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

Applied physics letters, 2005-01, Vol.86 (4), p.043108-043108-3

2005

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A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.718-721

2005

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Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Applied physics letters, 2005-06, Vol.86 (23), p.232106-232106-3

2005

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Unstable luminescence in GaN and ZnO

Physica. B, Condensed matter, 2006-04, Vol.376, p.715-718

2006

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Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Journal of applied physics, 2006-02, Vol.99 (3)

2006

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Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Applied physics letters, 2002-12, Vol.81 (27), p.5120-5122

2002

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Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Study of SiNx and SiO2 passivation of GaN surfaces

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

Applied physics letters, 2004-11, Vol.85 (18), p.4058-4060

2004

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Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.749-753

2005

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Effect of carrier transit time on the bandwidth of traveling-wave photodetector

Optical and quantum electronics, 2007-07, Vol.39 (9), p.781-786

2007

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Analyses of short-term follow-up MRI and PET-CT for evaluation of residual tumour after inadequate primary resection of malignant soft-tissue tumours

Clinical radiology, 2013-02, Vol.68 (2), p.117-124

2013

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Effect of Barrier Thickness on the Interface and Optical Properties of InGaN/GaN Multiple Quantum Wells

Japanese Journal of Applied Physics, 2001, Vol.40 (5R), p.3085-3088

2001

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Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

Applied physics letters, 2006-02, Vol.88 (7)

2006

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Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

Journal of applied physics, 2005-06, Vol.97 (12), p.126107-126107-3

2005

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Identification and prioritization of performancelimiting factors for water treatment plantoptimization in Korea

Water science & technology. Water supply, 2006-03, Vol.6 (2), p.71-76

2006

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Origin of unstable photoluminescence in GaN: metastable defects or surface states?

Physica status solidi. C, 2005-05, Vol.2 (7), p.2716-2719

2005

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Effect of potential fluctuations on photoluminescence in Mg-doped GaN

Physica status solidi. C, 2005-05, Vol.2 (7), p.2761-2764

2005

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A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Journal of crystal growth, 2006-05, Vol.291 (1), p.301-308

2006

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Optimization of ( 1 1 2 ¯ 0 ) a-plane GaN growth by MOCVD on ( 1 1 ¯ 0 2 ) r-plane sapphire

Dural Tears in Spinal Burst Fractures: Predictable MR Imaging Findings

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Dislocation density reduction in GaN using porous SiN interlayers

Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements

The Study of Cerebral Hemodynamics in the Hyperacute Stage of Fat Embolism Induced by Triolein Emulsion

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Unstable luminescence in GaN and ZnO

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers

Study of SiNx and SiO2 passivation of GaN surfaces

Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

Effect of carrier transit time on the bandwidth of traveling-wave photodetector

Analyses of short-term follow-up MRI and PET-CT for evaluation of residual tumour after inadequate primary resection of malignant soft-tissue tumours

Effect of Barrier Thickness on the Interface and Optical Properties of InGaN/GaN Multiple Quantum Wells

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

Identification and prioritization of performancelimiting factors for water treatment plantoptimization in Korea

Origin of unstable photoluminescence in GaN: metastable defects or surface states?

Effect of potential fluctuations on photoluminescence in Mg-doped GaN

A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

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