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High-speed and high-efficiency superconducting nanowire single photon detector array

Optics express, 2013-01, Vol.21 (2), p.1440-1447

2013

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Pressure Induced Deep Gap State of Oxygen in GaN

Physical review letters, 1997-05, Vol.78 (20), p.3923-3926

1997

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Orthodox etching of HVPE-grown GaN

Journal of crystal growth, 2007-07, Vol.305 (2), p.384-392

2007

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Surface recombination and sulfide passivation of GaN

Journal of electronic materials, 2000-03, Vol.29 (3), p.325-331

2000

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Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

Applied physics letters, 2002-07, Vol.81 (1), p.79-81

2002

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III-nitride vertical hot electron transistor with polarization doping and collimated injection

Applied physics letters, 2022-11, Vol.121 (22)

2022

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Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors

Applied physics letters, 2024-02, Vol.124 (6)

2024

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Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Applied physics letters, 1997-06, Vol.70 (25), p.3377-3379

1997

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Bulk GaN crystal growth by the high-pressure ammonothermal method

Journal of crystal growth, 2007-03, Vol.300 (1), p.11-16

2007

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Applied physics letters, 2001-03, Vol.78 (12), p.1685-1687

2001

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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

Applied physics letters, 2003-05, Vol.82 (20), p.3433-3435

2003

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1200 V GaN-on-silicon Schottky diode

Physica status solidi. C, 2013-05, Vol.10 (5), p.835-839

2013

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Afterpulsing and instability in superconducting nanowire avalanche photodetectors

Applied physics letters, 2012-03, Vol.100 (11), p.112601-112601-5

2012

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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Applied physics letters, 2001-06, Vol.78 (25), p.3980-3982

2001

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Applied physics letters, 2000-11, Vol.77 (22), p.3532-3534

2000

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Identification of Si and O donors in hydride-vapor-phase epitaxial GaN

Applied physics letters, 2001-10, Vol.79 (16), p.2570-2572

2001

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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Solid state communications, 2001-02, Vol.117 (10), p.571-575

2001

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High voltage GaN-on-silicon HEMT

Physica status solidi. C, 2013-05, Vol.10 (5), p.844-848

2013

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Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

Applied physics letters, 1999-06, Vol.74 (23), p.3537-3539

1999

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High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors

Applied physics letters, 2006-04, Vol.88 (17), p.171101-171101-3

2006

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Measurement of second order susceptibilities of GaN and AlGaN

Journal of applied physics, 2005-03, Vol.97 (5), p.053512-053512-13

2005

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Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

Applied physics letters, 2004-09, Vol.85 (10), p.1722-1724

2004

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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Applied physics letters, 1991-08, Vol.59 (8), p.944-946

1991

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Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Applied physics letters, 2001-01, Vol.78 (3), p.332-334

2001

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Growth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged species

Journal of applied physics, 1994-10, Vol.76 (8), p.4587-4595

1994

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High-speed and high-efficiency superconducting nanowire single photon detector array

Pressure Induced Deep Gap State of Oxygen in GaN

Orthodox etching of HVPE-grown GaN

Surface recombination and sulfide passivation of GaN

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

III-nitride vertical hot electron transistor with polarization doping and collimated injection

Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Bulk GaN crystal growth by the high-pressure ammonothermal method

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

1200 V GaN-on-silicon Schottky diode

Afterpulsing and instability in superconducting nanowire avalanche photodetectors

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Identification of Si and O donors in hydride-vapor-phase epitaxial GaN

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

High voltage GaN-on-silicon HEMT

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors

Measurement of second order susceptibilities of GaN and AlGaN

Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Growth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged species

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