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High-speed and high-efficiency superconducting nanowire single photon detector array

Optics express, 2013-01, Vol.21 (2), p.1440-1447

2013

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Pressure Induced Deep Gap State of Oxygen in GaN

Physical review letters, 1997-05, Vol.78 (20), p.3923-3926

1997

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Orthodox etching of HVPE-grown GaN

Journal of crystal growth, 2007-07, Vol.305 (2), p.384-392

2007

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Surface recombination and sulfide passivation of GaN

Journal of electronic materials, 2000-03, Vol.29 (3), p.325-331

2000

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Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

Applied physics letters, 2002-07, Vol.81 (1), p.79-81

2002

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III-nitride vertical hot electron transistor with polarization doping and collimated injection

Applied physics letters, 2022-11, Vol.121 (22)

2022

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Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Applied physics letters, 1997-06, Vol.70 (25), p.3377-3379

1997

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Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors

Applied physics letters, 2024-02, Vol.124 (6)

2024

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Bulk GaN crystal growth by the high-pressure ammonothermal method

Journal of crystal growth, 2007-03, Vol.300 (1), p.11-16

2007

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Applied physics letters, 2001-03, Vol.78 (12), p.1685-1687

2001

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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

Applied physics letters, 2003-05, Vol.82 (20), p.3433-3435

2003

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1200 V GaN-on-silicon Schottky diode

Physica status solidi. C, 2013-05, Vol.10 (5), p.835-839

2013

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Afterpulsing and instability in superconducting nanowire avalanche photodetectors

Applied physics letters, 2012-03, Vol.100 (11), p.112601-112601-5

2012

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Applied physics letters, 2000-11, Vol.77 (22), p.3532-3534

2000

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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Applied physics letters, 2001-06, Vol.78 (25), p.3980-3982

2001

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Identification of Si and O donors in hydride-vapor-phase epitaxial GaN

Applied physics letters, 2001-10, Vol.79 (16), p.2570-2572

2001

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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Solid state communications, 2001-02, Vol.117 (10), p.571-575

2001

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High voltage GaN-on-silicon HEMT

Physica status solidi. C, 2013-05, Vol.10 (5), p.844-848

2013

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Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

Applied physics letters, 1999-06, Vol.74 (23), p.3537-3539

1999

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Measurement of second order susceptibilities of GaN and AlGaN

Journal of applied physics, 2005-03, Vol.97 (5), p.053512-053512-13

2005

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High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors

Applied physics letters, 2006-04, Vol.88 (17), p.171101-171101-3

2006

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Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

Applied physics letters, 2004-09, Vol.85 (10), p.1722-1724

2004

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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Applied physics letters, 1991-08, Vol.59 (8), p.944-946

1991

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Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Applied physics letters, 2001-01, Vol.78 (3), p.332-334

2001

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X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

Applied physics letters, 1997-04, Vol.70 (16), p.2156-2158

1997

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High-speed and high-efficiency superconducting nanowire single photon detector array

Pressure Induced Deep Gap State of Oxygen in GaN

Orthodox etching of HVPE-grown GaN

Surface recombination and sulfide passivation of GaN

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

III-nitride vertical hot electron transistor with polarization doping and collimated injection

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors

Bulk GaN crystal growth by the high-pressure ammonothermal method

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

1200 V GaN-on-silicon Schottky diode

Afterpulsing and instability in superconducting nanowire avalanche photodetectors

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Identification of Si and O donors in hydride-vapor-phase epitaxial GaN

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

High voltage GaN-on-silicon HEMT

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

Measurement of second order susceptibilities of GaN and AlGaN

High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors

Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

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