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Nano-LED array fabrication suitable for future single photon lithography

Nanotechnology, 2015-05, Vol.26 (18), p.185302-7

2015

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Semiconductor science and technology, 2021-09, Vol.36 (9), p.95040

2021

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Generation of terahertz transients from Co2Fe0.4Mn0.6Si Heusler alloy/heavy-metal bilayers

Journal of magnetism and magnetic materials, 2022-04, Vol.547, p.168791, Article 168791

2022

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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions

Surface & coatings technology, 2018-12, Vol.355, p.22-28

2018

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Monitoring polymeric compounding processes inline with THz time-domain spectroscopy

Polymer testing, 2009-02, Vol.28 (1), p.30-35

2009

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Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

Nanotechnology, 2013-10, Vol.24 (40), p.405302

2013

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Impact of the contact metallization on the performance of photoconductive THz antennas

Optics express, 2008-11, Vol.16 (24), p.19695-19705

2008

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High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation

IEEE journal of selected topics in quantum electronics, 2008-03, Vol.14 (2), p.289-294

2008

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Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Applied materials today, 2017-06, Vol.7, p.134-137

2017

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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

Applied physics letters, 2012-04, Vol.100 (14), p.142113-142113-3

2012

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A study of the structural and magnetic properties of ZnO implanted by Gd ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-08, Vol.332, p.80-84

2014

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Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength

Journal of infrared, millimeter and terahertz waves, 2017-05, Vol.38 (5), p.574-582

2017

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GaN:Co epitaxial layers grown by MOVPE

Journal of crystal growth, 2015-03, Vol.414, p.62-68

2015

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Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

Semiconductor science and technology, 2014-07, Vol.29 (7)

2014

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Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45022

2014

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Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.820-822

2006

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Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1725-1727

2005

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Non-uniform distribution of induced strain in a gate-recessed AlGaN GaN structure evaluated by micro-PL measurements

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105008

2012

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Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

IEEE photonics technology letters, 2011-09, Vol.23 (17), p.1189-1191

2011

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Magnetism in GaN layers implanted by La, Gd, Dy and Lu

Thin solid films, 2011-07, Vol.519 (18), p.6120-6125

2011

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Sensitivity Enhancement of Metal- Semiconductor -Metal Photodetectors on Low-Temperature-Grown GaAs Using Alloyed Contacts

IEEE photonics technology letters, 2008-06, Vol.20 (12), p.1054-1056

2008

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Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

Vacuum, 2012-01, Vol.86 (6), p.754-756

2012

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GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Semiconductor science and technology, 2012-11, Vol.27 (11), p.115002

2012

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Nano-LED array fabrication suitable for future single photon lithography

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Generation of terahertz transients from Co2Fe0.4Mn0.6Si Heusler alloy/heavy-metal bilayers

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions

Monitoring polymeric compounding processes inline with THz time-domain spectroscopy

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

Impact of the contact metallization on the performance of photoconductive THz antennas

High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation

Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

A study of the structural and magnetic properties of ZnO implanted by Gd ions

Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength

GaN:Co epitaxial layers grown by MOVPE

Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates

Non-uniform distribution of induced strain in a gate-recessed AlGaN GaN structure evaluated by micro-PL measurements

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

Magnetism in GaN layers implanted by La, Gd, Dy and Lu

Sensitivity Enhancement of Metal- Semiconductor -Metal Photodetectors on Low-Temperature-Grown GaAs Using Alloyed Contacts

Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

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