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NEW ALGORITHM FOR DETERMINING THE REMODELLING OF THE HEART IN CHRONIC HEART FAILURE WITH PRESERVED EJECTION FRACTION

Vestnik Vitebskogo gosudarstvennogo medit︠s︡inkogo universiteta, 2022-02, Vol.21 (1), p.75-87

2022

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Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

International journal of nanotechnology., 2017, Vol.14 (7/8), p.604

2017

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Stochastic resonance in a metal-oxide memristive device

Chaos, solitons and fractals, 2021-03, Vol.144, p.110723, Article 110723

2021

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Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network

Chaos, solitons and fractals, 2021-05, Vol.146, p.110890, Article 110890

2021

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Capacitive effects can make memristors chaotic

Chaos, solitons and fractals, 2021-03, Vol.144, p.110699, Article 110699

2021

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Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications

Microelectronic engineering, 2019-07, Vol.215, p.110988, Article 110988

2019

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A neurohybrid memristive system for adaptive stimulation of hippocampus

Chaos, solitons and fractals, 2021-05, Vol.146, p.110804, Article 110804

2021

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New optical oxygen-deficient centers in 80 keV Re-implanted amorphous silica

Journal of non-crystalline solids, 2020-02, Vol.529, p.119775, Article 119775

2020

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Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

Materials letters, 2022-03, Vol.310, p.131494, Article 131494

2022

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Crossover from clean to dirty superconducting limit in YBCO films with modulated disorder

Physica. B, Condensed matter, 2024-04, Vol.679, p.415764, Article 415764

2024

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Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise

Chaos, solitons and fractals, 2022-09, Vol.162, p.112459, Article 112459

2022

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.60-64

2023

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.65-70

2023

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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Microelectronic engineering, 2018-02, Vol.187-188, p.134-138

2018

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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Surface & coatings technology, 2020-03, Vol.386, p.125496, Article 125496

2020

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Critical-field slope reduction and upward curvature of the phase-transition lines of thin disordered superconducting YBa 2 Cu 3 O 7 − x films in strong magnetic fields

Physica. C, Superconductivity, 2020-01, Vol.568, p.1353581, Article 1353581

2020

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Technological features of formation of functionally oriented coatings of marine diesel engine parts

Materials today : proceedings, 2021, Vol.38, p.1789-1793

2021

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Critical-field slope reduction and upward curvature of the phase-transition lines of thin disordered superconducting YBa2Cu3O7−x films in strong magnetic fields

Physica. C, Superconductivity, 2020-01, Vol.568, Article 1353581

2020

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Formation of Weighting Coefficients in an Artificial Neural Network Based on the Memristive Effect in Metal–Oxide–Metal Nanostructures

Journal of communications technology & electronics, 2018-08, Vol.63 (8), p.950-957

2018

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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.843

2018

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Formation of hexagonal phase 9R-Si in SiO2/Si system upon Kr+ ion implantation

Vestnik Moskovskogo universiteta. Serii͡a︡ III: Fizika, astronomii͡a, 2023-06 (3_2023), p.2330501-2330501–7

2023

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Simulation of synaptic coupling of neuron-like generators via a memristive device

Technical physics, 2017-08, Vol.62 (8), p.1259-1265

2017

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Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

Vacuum, 2015-12, Vol.122, p.293-299

2015

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Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.797-801

2018

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Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-05, Vol.326, p.41-44

2014

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NEW ALGORITHM FOR DETERMINING THE REMODELLING OF THE HEART IN CHRONIC HEART FAILURE WITH PRESERVED EJECTION FRACTION

Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

Stochastic resonance in a metal-oxide memristive device

Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network

Capacitive effects can make memristors chaotic

Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications

A neurohybrid memristive system for adaptive stimulation of hippocampus

New optical oxygen-deficient centers in 80 keV Re-implanted amorphous silica

Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

Crossover from clean to dirty superconducting limit in YBCO films with modulated disorder

Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise

Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Critical-field slope reduction and upward curvature of the phase-transition lines of thin disordered superconducting YBa 2 Cu 3 O 7 − x films in strong magnetic fields

Technological features of formation of functionally oriented coatings of marine diesel engine parts

Critical-field slope reduction and upward curvature of the phase-transition lines of thin disordered superconducting YBa2Cu3O7−x films in strong magnetic fields

Formation of Weighting Coefficients in an Artificial Neural Network Based on the Memristive Effect in Metal–Oxide–Metal Nanostructures

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Formation of hexagonal phase 9R-Si in SiO2/Si system upon Kr+ ion implantation

Simulation of synaptic coupling of neuron-like generators via a memristive device

Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers

Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

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