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Observation of entanglement between a quantum dot spin and a single photon

Nature (London), 2012-11, Vol.491 (7424), p.426-430

2012

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Magnetically tunable singlet-triplet spin qubit in a four-electron InGaAs coupled quantum dot

Scientific reports, 2013-11, Vol.3 (1), p.3121-3121, Article 3121

2013

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Quantum teleportation from a propagating photon to a solid-state spin qubit

Nature communications, 2013-11, Vol.4 (1), p.2744-2744, Article 2744

2013

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Coherent two-electron spin qubits in an optically active pair of coupled InGaAs quantum dots

Physical review letters, 2012-09, Vol.109 (10), p.107401-107401, Article 107401

2012

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L’état actuel de la recherche sur le concile d’Elvire

Revue des sciences religieuses, 2008, Vol.82 (4), p.517-546

SANCHEZ, Miguel J. Lazaro

2008

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Composition modulation analysis of InxGa1―xP layers grown on (0 0 1 ) germanium substrates

Applied surface science, 2010-07, Vol.256 (18), p.5681-5683

2010

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Optical amplification using raman transitions between spin-singlet and spin-triplet states of a pair of coupled in-GaAs quantum dots

Physical review letters, 2011-06, Vol.107 (1), p.017401, Article 017401

2011

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Evaluation of photovoltaic cells in a multi-criteria decision making process

Annals of operations research, 2012-10, Vol.199 (1), p.373-391

2012

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Immunocytochemical Detection of Orexin A in Endocrine Cells of the Developing Mouse Gut

The journal of histochemistry and cytochemistry, 2002-01, Vol.50 (1), p.63-69

2002

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The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.118-123

2008

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Mechanism of Phase Separation Generation in Ge-Based Solar Cell Tunnel Junctions

Journal of nanoscience and nanotechnology, 2010-02, Vol.10 (2), p.1166-1170

2010

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Plasma exchange as an effective salvage therapy in AZD1222 vaccine-induced thrombotic thrombocytopenia: a case report

Blood transfusion = Trasfusione del sangue, 2022-03, Vol.20 (2), p.152-155

2022

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Room-temperature laser emission of GaInNAs-GaAs quantum wells grown on GaAs (111)B

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2271-2273

2005

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Local vibration modes and nitrogen incorporation in AlGaAs:N layers

Physica status solidi. C, 2008-05, Vol.5 (6), p.2345-2348

2008

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Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1047-1052

2006

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Dominant carrier recombination mechanisms in GaInNAs∕GaAs quantum well light-emitting diodes

Applied physics letters, 2004-07, Vol.85 (1), p.40-42

2004

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Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3–1.5μm applications

Applied physics letters, 2004-09, Vol.85 (11), p.1940-1942

2004

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Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on [formula omitted]B GaAs

Physica. E, Low-dimensional systems & nanostructures, 2004-07, Vol.23 (3), p.356-361

2004

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Influence of localization on the carrier diffusion in GaAs ∕ ( Al , Ga ) As and ( In , Ga ) ( As , N ) ∕ GaAs quantum wells: A comparative study

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (12), Article 125303

2006

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Carrier diffusion lengths in (In,Ga)(As,N)/GaAs quantum wells studied by spatially resolved cathodoluminescence

Physica status solidi. C, 2006-03, Vol.3 (3), p.627-630

2006

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Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

Applied physics letters, 2004-04, Vol.84 (14), p.2524-2526

2004

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Resonant Spectroscopy on Charge Tunable Quantum Dots in Photonic Crystal Structures

IEEE journal of quantum electronics, 2011-11, Vol.47 (11), p.1371-1374

2011

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Effects of \hbox Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

IEEE electron device letters, 2008-03, Vol.29 (3), p.209-211

2008

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The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures

Journal of physics. D, Applied physics, 2008-03, Vol.41 (6), p.065413-065413 (4)

2008

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Nonequilibrium dynamics in an optical transition from a neutral quantum dot to a correlated many-body state

Physical review. B, Condensed matter and materials physics, 2013-10, Vol.88 (16), Article 161304

2013

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Observation of entanglement between a quantum dot spin and a single photon

Magnetically tunable singlet-triplet spin qubit in a four-electron InGaAs coupled quantum dot

Quantum teleportation from a propagating photon to a solid-state spin qubit

Coherent two-electron spin qubits in an optically active pair of coupled InGaAs quantum dots

L’état actuel de la recherche sur le concile d’Elvire

Composition modulation analysis of InxGa1―xP layers grown on (0 0 1 ) germanium substrates

Optical amplification using raman transitions between spin-singlet and spin-triplet states of a pair of coupled in-GaAs quantum dots

Evaluation of photovoltaic cells in a multi-criteria decision making process

Immunocytochemical Detection of Orexin A in Endocrine Cells of the Developing Mouse Gut

The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE

Mechanism of Phase Separation Generation in Ge-Based Solar Cell Tunnel Junctions

Plasma exchange as an effective salvage therapy in AZD1222 vaccine-induced thrombotic thrombocytopenia: a case report

Room-temperature laser emission of GaInNAs-GaAs quantum wells grown on GaAs (111)B

Local vibration modes and nitrogen incorporation in AlGaAs:N layers

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

Dominant carrier recombination mechanisms in GaInNAs∕GaAs quantum well light-emitting diodes

Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3–1.5μm applications

Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on [formula omitted]B GaAs

Influence of localization on the carrier diffusion in GaAs ∕ ( Al , Ga ) As and ( In , Ga ) ( As , N ) ∕ GaAs quantum wells: A comparative study

Carrier diffusion lengths in (In,Ga)(As,N)/GaAs quantum wells studied by spatially resolved cathodoluminescence

Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

Resonant Spectroscopy on Charge Tunable Quantum Dots in Photonic Crystal Structures

Effects of \hbox Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures

Nonequilibrium dynamics in an optical transition from a neutral quantum dot to a correlated many-body state

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