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Study of neutron irradiated structures of ammonothermal GaN

Journal of physics. D, Applied physics, 2017-04, Vol.50 (13), p.135102

2017

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Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K

Physical review. B, 2020-07, Vol.102 (3), p.1, Article 035201

2020

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Carrier dynamics in blue and green emitting InGaN MQWs

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.977-982

2015

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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Semiconductor science and technology, 2017-12, Vol.32 (12), p.125014

2017

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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique

Journal of electronic materials, 2016-07, Vol.45 (7), p.3290-3299

2016

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Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

Journal of applied physics, 2013-03, Vol.113 (10)

2013

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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Applied physics letters, 2006-05, Vol.88 (20)

2006

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Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Applied physics letters, 2003-07, Vol.83 (1), p.66-68

2003

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Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg

Physica. B, Condensed matter, 2011-08, Vol.406 (15), p.2990-2993

2011

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High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

Journal of crystal growth, 2011-08, Vol.329 (1), p.33-38

2011

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Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques

Journal of crystal growth, 2005-07, Vol.281 (1), p.161-167

2005

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Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers

Journal of applied physics, 2004-10, Vol.96 (8), p.4326-4333

2004

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Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations

Applied physics letters, 2006-10, Vol.89 (17), p.172119-172119-3

2006

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Optical gain in homoepitaxial GaN

Applied physics letters, 2004-08, Vol.85 (6), p.952-954

2004

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Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Applied physics letters, 2004-08, Vol.85 (5), p.771-773

2004

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Hyper-Rayleigh scattering and two-photon luminescence of phenylamine- indandione chromophores

IOP conference series. Materials Science and Engineering, 2012-01, Vol.38 (1), p.12035-7

2012

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Carrier recombination under one-photon and two-photon excitation in GaN epilayers

Micron (Oxford, England : 1993), 2009, Vol.40 (1), p.118-121

2009

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Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

IOP conference series. Materials Science and Engineering, 2012-01, Vol.38 (1), p.12054-5

2012

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Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1614-1618

2006

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Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire

Journal of crystal growth, 2005-07, Vol.281 (1), p.183-187

2005

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Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.820-823

2005

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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Journal of luminescence, 2017-08, Vol.188, p.301-306

2017

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Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

Physica status solidi. A, Applied research, 2004-01, Vol.201 (2), p.199-202

2004

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Micro-analysis of light emission properties of GaN-based laser diodes

Physica status solidi. C, 2007-06, Vol.4 (7), p.2818-2821

2007

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Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1759-1763

2006

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Study of neutron irradiated structures of ammonothermal GaN

Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K

Carrier dynamics in blue and green emitting InGaN MQWs

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique

Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg

High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques

Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers

Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations

Optical gain in homoepitaxial GaN

Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Hyper-Rayleigh scattering and two-photon luminescence of phenylamine- indandione chromophores

Carrier recombination under one-photon and two-photon excitation in GaN epilayers

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

Micro-analysis of light emission properties of GaN-based laser diodes

Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE

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