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Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3258-3264

2012

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A Physical Model of High Temperature 4H-SiC MOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2029-2040

2008

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Bloch-based MRI system simulator considering realistic electromagnetic fields for calculation of signal, noise, and specific absorption rate

Magnetic resonance in medicine, 2014-07, Vol.72 (1), p.237-247

2014

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Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

IEEE transactions on nuclear science, 2018-06, Vol.65 (6), p.1248-1254

2018

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of applied physics, 2006-08, Vol.100 (4)

2006

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Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1828-1832

2019

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Development of an Evidence biochip array kit for the multiplex screening of more than 20 anthelmintic drugs

Analytical and bioanalytical chemistry, 2012-07, Vol.403 (10), p.3051-3056

2012

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Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.4053-4061

2002

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A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Journal of applied physics, 2006-08, Vol.100 (4)

2006

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Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs

Materials science forum, 2007-01, Vol.556-557, p.847-850

2007

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Radiation effects on microelectronics in space

Proceedings of the IEEE, 1988-11, Vol.76 (11), p.1443-1469

1988

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Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Materials science forum, 2006-10, Vol.527-529, p.1317-1320

2006

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The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping

Materials science forum, 2009-01, Vol.600-603, p.743-746

2009

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Independent of Cirrhosis, Hepatocellular Carcinoma Risk Is Increased with Diabetes and Metabolic Syndrome

The American journal of medicine, 2017-06, Vol.130 (6), p.746.e1-746.e7

2017

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An overview of radiation-induced interface traps in MOS structures

Semiconductor science and technology, 1989-12, Vol.4 (12), p.986-999

1989

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Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Journal of applied physics, 1997-06, Vol.81 (11), p.7687-7689

1997

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Gelatinase (type IV collagenase) immunolocalization in cells and tissues: use of an antiserum to rabbit bone gelatinase that identifies high and low Mr forms

Journal of cell science, 1989-03, Vol.92, p.487-495

1989

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On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices

Materials science forum, 2006-10, Vol.527-529, p.1007-1010

2006

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Silicon carbide JFET radiation response

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.1974-1981

1992

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Silicon carbide FETs for high temperature nuclear environments

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1642-1648

1996

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Modeling the electrical characteristics of n -channel 6H–SiC junction-field-effect transistors as a function of temperature

Journal of applied physics, 1996-01, Vol.79 (1), p.545-552

1996

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Analysis of neutron damage in high-temperature silicon carbide JFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1884-1894

1994

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The use pulsed and amperometry combined with ion-exclusion chromatography for the simultaneous analysis of ascorbic acid and sulfite

Journal of Chromatography A, 1991, Vol.546 (1-2), p.119-124

1991

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Space and Terrestrial Radiation Response of Silicon Carbide Power MOSFETs

2017 IEEE Radiation Effects Data Workshop (REDW), 2017, p.1-5

2017

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An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate Insulators

IEEE transactions on nuclear science, 1979, Vol.26 (6), p.4814-4818

1979

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Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

A Physical Model of High Temperature 4H-SiC MOSFETs

Bloch-based MRI system simulator considering realistic electromagnetic fields for calculation of signal, noise, and specific absorption rate

Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

Development of an Evidence biochip array kit for the multiplex screening of more than 20 anthelmintic drugs

Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs

Radiation effects on microelectronics in space

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping

Independent of Cirrhosis, Hepatocellular Carcinoma Risk Is Increased with Diabetes and Metabolic Syndrome

An overview of radiation-induced interface traps in MOS structures

Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Gelatinase (type IV collagenase) immunolocalization in cells and tissues: use of an antiserum to rabbit bone gelatinase that identifies high and low Mr forms

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices

Silicon carbide JFET radiation response

Silicon carbide FETs for high temperature nuclear environments

Modeling the electrical characteristics of n -channel 6H–SiC junction-field-effect transistors as a function of temperature

Analysis of neutron damage in high-temperature silicon carbide JFETs

The use pulsed and amperometry combined with ion-exclusion chromatography for the simultaneous analysis of ascorbic acid and sulfite

Space and Terrestrial Radiation Response of Silicon Carbide Power MOSFETs

An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate Insulators

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