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Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2016-09, Vol.831, p.265-268

2016

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A rad-hard CMOS active pixel sensor for electron microscopy

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2009-01, Vol.598 (2), p.642-649

2009

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Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Chinese physics B, 2016-09, Vol.25 (9), p.468-473

丁李利 Simone Gerardin Marta Bagatin Dario Bisello Serena Mattiazzo Alessandro Paccagnella

2016

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TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1571-1578

2021

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Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.82-90

2019

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Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1302-1311

2020

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Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.307-313

2022

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Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1437-1443

2022

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Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.2042-2050

2023

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Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-09, Vol.1066, p.169645, Article 169645

2024

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A generalized EKV charge-based MOSFET model including oxide and interface traps

Solid-state electronics, 2021-03, Vol.177, p.107951, Article 107951

2021

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Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2023-01, p.1-1

2023

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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.427-436

2024

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Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

IEEE transactions on nuclear science, 2017-10, Vol.64 (10), p.2639-2647

2017

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Fully Depleted MAPS in 110-nm CMOS Process With 100-300-μm Active Substrate

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2393-2399

2020

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Measurements of surface and bulk radiation damage effects in silicon detectors for Phase-2 CMS Outer Tracker

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-11, Vol.980, p.164423, Article 164423

2020

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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.38-47

2019

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Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

Electronics (Basel), 2023-02, Vol.12 (3), p.543

2023

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TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1444-1452

2022

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Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2899-2905

2015

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Calorimeter prototyping for the iMPACT project pCT scanner

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-08, Vol.936, p.1-4

2019

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Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2016-09, Vol.831, p.265-268

2016

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Characterization of the radiation tolerant ToASt ASIC for the readout of the PANDA MVD strip detector

Journal of instrumentation, 2024-04, Vol.19 (4), p.C04047

2024

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Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2015-10, Vol.796, p.104-107

2015

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Characterisation of a pixel sensor in 0.20 μ m SOI technology for charged particle tracking

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011-10, Vol.654 (1), p.258-265

2011

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Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications

A rad-hard CMOS active pixel sensor for electron microscopy

Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose

A generalized EKV charge-based MOSFET model including oxide and interface traps

Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Fully Depleted MAPS in 110-nm CMOS Process With 100-300-μm Active Substrate

Measurements of surface and bulk radiation damage effects in silicon detectors for Phase-2 CMS Outer Tracker

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose

Calorimeter prototyping for the iMPACT project pCT scanner

Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications

Characterization of the radiation tolerant ToASt ASIC for the readout of the PANDA MVD strip detector

Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons

Characterisation of a pixel sensor in 0.20 μ m SOI technology for charged particle tracking

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