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Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2486-2497

2024

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A (0.75–1.13) mW and (2.4–5.2) ps RMS Jitter Integer-N-Based Dual-Loop PLL for Indoor and Outdoor Positioning in 28-nm FD-SOI CMOS Technology

IEEE transactions on circuits and systems. II, Express briefs, 2023-10, Vol.70 (10), p.3782-3786

2023

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Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4770-4776

2020

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Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Applied sciences, 2021-03, Vol.11 (5), p.2393

2021

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THz Characterization and Modeling of SiGe HBTs: Review (Invited)

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1363-1372

2020

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Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.154-157

2019

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Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

Applied sciences, 2021-12, Vol.11 (23), p.11088

2021

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Low-Loss Ka-band SPDT Switch Design Methodology for 5G Applications in 65 nm CMOS SOI Technology

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2020, p.5-8

2020

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Source-Pull and Load-Pull Characterization of Graphene FET

IEEE journal of the Electron Devices Society, 2015-01, Vol.3 (1), p.49-53

2015

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Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Advanced functional materials, 2023-07, Vol.33 (29), p.n/a

2023

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Silicon Test Structures Design for Sub-THz and THz Measurements

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5639-5645

2020

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Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6007-6014

2021

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A 22-42GHz 28nm CMOS SOI 3:1 VSWR Resilient Balanced Power Amplifier for 5G Application

2023 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, p.273-276

2023

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Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS 2 Atomic Flakes

Advanced functional materials, 2023-07, Vol.33 (29)

2023

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On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

IEEE transactions on microwave theory and techniques, 2018-07, Vol.66 (7), p.3332-3341

2018

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A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology

IEEE transactions on circuits and systems. II, Express briefs, 2023-07, p.1-1

2023

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An Integrated 65-nm CMOS SOI Ka-Band Asymmetrical Single-Pole Double-Throw Switch Based on Hybrid Couplers

IEEE microwave and wireless components letters, 2020-12, Vol.30 (12), p.1157-1160

2020

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One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS

2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2021, p.119-122

2021

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Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz

IEEE transactions on terahertz science and technology, 2020-09, Vol.10 (5), p.1-1

2020

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Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited)

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

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Investigation of Variation in On-Si On-Wafer TRL Calibration in Sub-THz

IEEE transactions on semiconductor manufacturing, 2021-05, Vol.34 (2), p.145-152

2021

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Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

IEEE transactions on terahertz science and technology, 2019-01, Vol.9 (1), p.89-97

2019

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High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

IEEE transactions on microwave theory and techniques, 2020-06, Vol.68 (6), p.2116-2123

2020

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Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor

Solid-state electronics, 2022-08, Vol.194, p.108359, Article 108359

2022

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A Low-Noise mm-Wave Injection-Locked Oscillator designed in 65nm Partially Depleted SOI CMOS Technology

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS), 2021, p.1-4

2021

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Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

A (0.75–1.13) mW and (2.4–5.2) ps RMS Jitter Integer-N-Based Dual-Loop PLL for Indoor and Outdoor Positioning in 28-nm FD-SOI CMOS Technology

Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current

Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

Low-Loss Ka-band SPDT Switch Design Methodology for 5G Applications in 65 nm CMOS SOI Technology

Source-Pull and Load-Pull Characterization of Graphene FET

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Silicon Test Structures Design for Sub-THz and THz Measurements

Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors

A 22-42GHz 28nm CMOS SOI 3:1 VSWR Resilient Balanced Power Amplifier for 5G Application

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS 2 Atomic Flakes

On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology

An Integrated 65-nm CMOS SOI Ka-Band Asymmetrical Single-Pole Double-Throw Switch Based on Hybrid Couplers

One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS

Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz

Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited)

Investigation of Variation in On-Si On-Wafer TRL Calibration in Sub-THz

Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor

A Low-Noise mm-Wave Injection-Locked Oscillator designed in 65nm Partially Depleted SOI CMOS Technology

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