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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Nano letters, 2016-03, Vol.16 (3), p.1863-1868

2016

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Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (12), Article 125437

2013

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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal of applied physics, 2019-11, Vol.126 (20)

2019

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Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

Journal of crystal growth, 2013-01, Vol.363, p.282-286

2013

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AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Journal of crystal growth, 2009-06, Vol.311 (12), p.3278-3284

2009

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Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Semiconductor science and technology, 2014-08, Vol.29 (8)

2014

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UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range

Semiconductor science and technology, 2018-06, Vol.33 (7)

2018

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Temperature quenching of photoluminescence intensities in undoped and doped GaN

Journal of applied physics, 1999-10, Vol.86 (7), p.3721-3728

1999

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Blue-green and white color tuning of monolithic light emitting diodes

Journal of applied physics, 2010-10, Vol.108 (7), p.073115-073115-6

2010

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From visible to white light emission by GaN quantum dots on Si(111) substrate

Applied physics letters, 1999-08, Vol.75 (7), p.962-964

1999

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From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125329

2004

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Applied physics letters, 2001-02, Vol.78 (9), p.1252-1254

2001

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Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

Applied physics letters, 2010-04, Vol.96 (16), p.161105-161105-3

2010

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Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Journal of crystal growth, 2017-11, Vol.477, p.262-266

2017

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Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

Journal of applied physics, 1999-10, Vol.86 (7), p.3714-3720

1999

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High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

Applied physics letters, 2001-01, Vol.78 (3), p.335-337

2001

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Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Journal of applied physics, 2003-05, Vol.93 (9), p.5222-5226

2003

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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11)

2006

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Polarity inversion of GaN(0 0 0 1) by a high Mg doping

Journal of crystal growth, 2004-09, Vol.269 (2), p.249-256

2004

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High doping level in Mg-doped GaN layers grown at low temperature

Journal of applied physics, 2008-01, Vol.103 (1), p.013110-013110-6

2008

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Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

Applied physics letters, 1996-09, Vol.69 (14), p.2071-2073

1996

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Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

Applied physics letters, 1999-12, Vol.75 (24), p.3751-3753

1999

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Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.501-510

2001

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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range

Temperature quenching of photoluminescence intensities in undoped and doped GaN

Blue-green and white color tuning of monolithic light emitting diodes

From visible to white light emission by GaN quantum dots on Si(111) substrate

From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

Polarity inversion of GaN(0 0 0 1) by a high Mg doping

High doping level in Mg-doped GaN layers grown at low temperature

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

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