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Impedance labelless detection-based polypyrrole DNA biosensor

Frontiers in bioscience, 2005-01, Vol.10 (1-3), p.180

2005

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Frequency-dependent electrical characteristics of GaAs MESFETs

IEEE transactions on electron devices, 1990-05, Vol.37 (5), p.1217-1227

1990

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An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling

IEEE electron device letters, 1988-03, Vol.9 (3), p.136-138

1988

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A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

IEEE photonics technology letters, 1993-01, Vol.5 (1), p.55-58

1993

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A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements

IEEE journal of quantum electronics, 1993-10, Vol.29 (10), p.2589-2595

1993

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Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures

Journal of applied physics, 1996-01, Vol.79 (1), p.460-466

1996

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Integration of a single vertical-cavity surface emitting laser onto a CMOS inverter chip

Electronics letters, 1995-05, Vol.31 (10), p.833-834

1995

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Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts

Electronics letters, 1994-07, Vol.30 (15), p.1235-1236

1994

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Temperature-dependent pseudodielectric functions of GaAs determined by spectroscopic ellipsometry

Journal of applied physics, 1995-02, Vol.77 (4), p.1701-1704

1995

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A computational Fourier series solution of the BenDaniel-Duke Hamiltonian for arbitrary shaped quantum wells

IEEE journal of quantum electronics, 1995-07, Vol.31 (7), p.1216-1222

1995

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Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/AlxGa1-xAs multiple quantum wells

Applied physics letters, 1993-02, Vol.62 (5), p.525-527

1993

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Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity

Solid-state electronics, 1996, Vol.39 (6), p.871-874

1996

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Reduction of the thermal impedance of vertical-cavity surface-emitting lasers after integration with copper substrates

Applied physics letters, 1996-07, Vol.69 (4), p.463-464

1996

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Selectively oxidized GaAs MESFETs transferred to a Si substrate

IEEE electron device letters, 1997-04, Vol.18 (4), p.138-140

1997

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Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well

Semiconductor science and technology, 1996-03, Vol.11 (3), p.345-351

1996

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Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation

Journal of applied physics, 1994-05, Vol.75 (9), p.4551-4556

1994

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Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells

Applied physics letters, 1991-10, Vol.59 (18), p.2308-2310

1991

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Low resistance Pd/Ge ohmic contacts to epitaxially lifted-off n-type GaAs film

Journal of electronic materials, 1995, Vol.24 (1), p.35-38

1995

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Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces

Applied physics letters, 1991-04, Vol.58 (16), p.1777-1779

1991

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Large Area Submicrometer Contact Printing Using a Contact Aligner

Langmuir, 2000-06, Vol.16 (12), p.5371-5375

2000

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Low temperature GaAs grown by gas source molecular beam epitaxy

Journal of crystal growth, 1992-05, Vol.120 (1), p.200-205

1992

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In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

Applied surface science, 1993, Vol.63 (1), p.1-8

1993

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A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

Journal of electronic materials, 1993-12, Vol.22 (12), p.1375-1381

1993

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Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures

Journal of crystal growth, 1991-11, Vol.114 (3), p.327-336

1991

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Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors

Applied physics letters, 1994-03, Vol.64 (10), p.1230-1232

1994

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Impedance labelless detection-based polypyrrole DNA biosensor

Frequency-dependent electrical characteristics of GaAs MESFETs

An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling

A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements

Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures

Integration of a single vertical-cavity surface emitting laser onto a CMOS inverter chip

Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts

Temperature-dependent pseudodielectric functions of GaAs determined by spectroscopic ellipsometry

A computational Fourier series solution of the BenDaniel-Duke Hamiltonian for arbitrary shaped quantum wells

Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/AlxGa1-xAs multiple quantum wells

Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity

Reduction of the thermal impedance of vertical-cavity surface-emitting lasers after integration with copper substrates

Selectively oxidized GaAs MESFETs transferred to a Si substrate

Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well

Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation

Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells

Low resistance Pd/Ge ohmic contacts to epitaxially lifted-off n-type GaAs film

Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces

Large Area Submicrometer Contact Printing Using a Contact Aligner

Low temperature GaAs grown by gas source molecular beam epitaxy

In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors

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