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Direct Li + incorporation during the anodic formation of compact TiO 2 layers

Chemical communications (Cambridge, England), 2018-03, Vol.54 (26), p.3251-3254

2018

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Direct Li+ incorporation during the anodic formation of compact TiO2 layers

Chemical communications (Cambridge, England), 2018, Vol.54 (26), p.3251-3254

2018

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Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Applied surface science, 2012-07, Vol.258 (19), p.7395-7400

2012

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Evidence of C migration in the SiO2 to the SiO2/Si interface of C-implanted structures

Thin solid films, 2021-07, Vol.730, p.138702, Article 138702

2021

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Photoluminescence from SiNxOy films deposited by reactive sputtering

Journal of physics. D, Applied physics, 2013-06, Vol.46 (23)

2013

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Ne–He bubble formation in co-implanted Si(111) substrates

Thin solid films, 2013-12, Vol.548, p.465-469

2013

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Carbon redistribution in nanometric Si1−xCx layers upon ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

Journal of physics. D, Applied physics, 2010-10, Vol.43 (39), p.395401-395401

2010

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Propagation of misfit dislocations from AlN/Si interface into Si

Journal of crystal growth, 2008-08, Vol.310 (17), p.3917-3923

2008

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Ion beam synthesis of SiC on Si toward the radiation damage free limit

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-04, Vol.445, p.34-40

2019

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Ion beam synthesis of SiC by C implantation into SIMOX(111)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1281-1284

2009

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PL characterization of GaN nanolayer obtained by N ion implantation into Si3N4/GaAs

Optical materials, 2020-03, Vol.101, p.109727, Article 109727

2020

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RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-04, Vol.445, p.1-7

2019

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Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation

Thin solid films, 2017-11, Vol.642, p.129-135

2017

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Direct Li+ incorporation during the anodic formation of compact TiO2 layersElectronic supplementary information (ESI) available. See DOI: 10.1039/c8cc00829a

2018-03

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Synthesis of GaN by N ion implantation in GaAs (001)

Applied physics letters, 1995-10, Vol.67 (18), p.2699-2701

1995

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Expression of a pilin subunit BfpA of the bundle-forming pilus of enteropathogenic Escherichia coli in an aroA live salmonella vaccine strain

Vaccine, 1999-02, Vol.17 (7), p.770-778

1999

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Small round blue cell tumor of seminal vesicle in a young patient

International Brazilian journal of urology, 2006-10, Vol.32 (5), p.566-569

2006

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Photoluminescence from SiN x O y films deposited by reactive sputtering

Journal of physics. D, Applied physics, 2013-06, Vol.46 (23), p.235106

2013

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Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs

Applied physics letters, 2002-10, Vol.81 (16), p.2953-2955

2002

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Controlling alloy composition of InAsP self-assembled quantum dots embedded in GaAs

Journal of applied physics, 2003-09, Vol.94 (5), p.3051-3056

2003

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Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates

Physical review. B, Condensed matter and materials physics, 2006-02, Vol.73 (7), Article 075330

2006

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Carbon redistribution in nanometric Si 1−x C x layers upon ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

Journal of physics. D, Applied physics, 2010-10, Vol.43 (39), p.395401

2010

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Economical impact of orchiectomy for advanced prostate cancer

International Brazilian journal of urology, 2003-04, Vol.29 (2), p.127-132

2003

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Seeding of InP islands on InAs quantum dot templates

Journal of applied physics, 2001-06, Vol.89 (11), p.6548-6550

2001

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He-induced cavity formation in silicon upon high-temperature implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161, p.1038-1042

2000

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Direct Li + incorporation during the anodic formation of compact TiO 2 layers

Direct Li+ incorporation during the anodic formation of compact TiO2 layers

Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Evidence of C migration in the SiO2 to the SiO2/Si interface of C-implanted structures

Photoluminescence from SiNxOy films deposited by reactive sputtering

Ne–He bubble formation in co-implanted Si(111) substrates

Carbon redistribution in nanometric Si1−xCx layers upon ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

Propagation of misfit dislocations from AlN/Si interface into Si

Ion beam synthesis of SiC on Si toward the radiation damage free limit

Ion beam synthesis of SiC by C implantation into SIMOX(111)

PL characterization of GaN nanolayer obtained by N ion implantation into Si3N4/GaAs

RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs

Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation

Direct Li+ incorporation during the anodic formation of compact TiO2 layersElectronic supplementary information (ESI) available. See DOI: 10.1039/c8cc00829a

Synthesis of GaN by N ion implantation in GaAs (001)

Expression of a pilin subunit BfpA of the bundle-forming pilus of enteropathogenic Escherichia coli in an aroA live salmonella vaccine strain

Small round blue cell tumor of seminal vesicle in a young patient

Photoluminescence from SiN x O y films deposited by reactive sputtering

Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs

Controlling alloy composition of InAsP self-assembled quantum dots embedded in GaAs

Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates

Carbon redistribution in nanometric Si 1−x C x layers upon ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

Economical impact of orchiectomy for advanced prostate cancer

Seeding of InP islands on InAs quantum dot templates

He-induced cavity formation in silicon upon high-temperature implantation

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