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Structural Inhomogeneities and Impurity Incorporation in Growth of High-Quality Ammonothermal GaN Substrates

Crystal growth & design, 2015-01, Vol.15 (1), p.291-294

2015

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Trapezoid defect in 4H–SiC epilayers

Journal of crystal growth, 2012, Vol.338 (1), p.16-19

2012

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Applied physics letters, 2013-08, Vol.103 (8), p.82110

2013

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Thermal expansion studies of indium-iron oxide

Physica Status Solidi (b), 2011-04, Vol.248 (4), p.928-930

2011

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Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

Crystal growth & design, 2015-10, Vol.15 (10), p.4837-4842

2015

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Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Journal of electronic materials, 2010-06, Vol.39 (6), p.777-780

2010

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Long range, non-destructive characterization of GaN substrates for power devices

Journal of crystal growth, 2019-01, Vol.506, p.178-184

2019

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HVPE GaN wafers with improved crystalline and electrical properties

Journal of crystal growth, 2016-12, Vol.456, p.113-120

2016

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Homoepitaxial HVPE GaN: A potential substrate for high performance devices

Journal of crystal growth, 2018-10, Vol.500, p.104-110

2018

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Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers

Journal of electronic materials, 2016-04, Vol.45 (4), p.2102-2107

2016

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Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

Crystal growth & design, 2014-11, Vol.14 (11), p.5331-5338

2014

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Incorporation of pervasive impurities on HVPE GaN growth directions

Journal of crystal growth, 2016-12, Vol.456, p.101-107

2016

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Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

Journal of applied physics, 2013-09, Vol.114 (12)

2013

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Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Scripta materialia, 2014-12, Vol.93, p.44-47

2014

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Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.1064-1065

2014

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The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys

Thin solid films, 2024-03, Vol.793, p.140255, Article 140255

2024

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Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

Surface & coatings technology, 2009-06, Vol.203 (17), p.2625-2627

2009

Volltextzugriff (PDF)

Transport, magnetic and structural properties of bulk In2-xFexO3

Physica status solidi. C, 2010-09, Vol.7 (9), p.2298-2301

2010

Volltextzugriff (PDF)

Defects affecting SiC power device reliability

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.2B.4-1-2B.4-4

2018

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Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy

Materials science forum, 2010-04, Vol.645-648, p.315-318

2010

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Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation

Journal of electronic materials, 2015-05, Vol.44 (5), p.1306-1310

2015

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Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

Materials science forum, 2018-06, Vol.924, p.265-268

2018

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Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

Materials Science Forum, 2016-05, Vol.858, p.233-236

2016

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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Materials science forum, 2014-02, Vol.778-780, p.324-327

2014

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Structural Inhomogeneities and Impurity Incorporation in Growth of High-Quality Ammonothermal GaN Substrates

Trapezoid defect in 4H–SiC epilayers

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Thermal expansion studies of indium-iron oxide

Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Long range, non-destructive characterization of GaN substrates for power devices

HVPE GaN wafers with improved crystalline and electrical properties

Homoepitaxial HVPE GaN: A potential substrate for high performance devices

Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

Incorporation of pervasive impurities on HVPE GaN growth directions

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys

Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

Transport, magnetic and structural properties of bulk In2-xFexO3

Defects affecting SiC power device reliability

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy

Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation

Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

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