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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

Journal of applied physics, 2020-06, Vol.127 (21)

2020

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Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies (Basel), 2017, Vol.10 (2), p.153-153

2017

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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3166-3175

2013

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5365-5372

2018

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AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3119-3131

2013

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Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100211-1-100211-8

2014

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Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4070-4077

2014

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Trap-state mapping to model GaN transistors dynamic performance

Scientific reports, 2022-02, Vol.12 (1), p.1755-1755, Article 1755

2022

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Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

Journal of applied physics, 2022-01, Vol.131 (4)

2022

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Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

Journal of applied physics, 2022-06, Vol.131 (22)

2022

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Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

Applied physics letters, 2022-04, Vol.120 (16)

2022

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Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

Journal of applied physics, 2021-12, Vol.130 (24)

2021

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Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Applied physics letters, 2012-01, Vol.100 (3), p.033505-033505-3

2012

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Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Laser-Based Lighting: Experimental Analysis and Perspectives

Materials, 2017-10, Vol.10 (10), p.1166

2017

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Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.947-953

2015

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Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics

Materials, 2021-02, Vol.14 (5), p.1114

2021

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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

IEEE electron device letters, 2014-10, Vol.35 (10), p.1004-1006

2014

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Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Journal of physics. D, Applied physics, 2021-08, Vol.54 (34), p.345109

2021

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Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3176-3182

2013

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Defect-Related Degradation of AlGaN-Based UV-B LEDs

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.200-205

2017

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Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation

Materials, 2021-04, Vol.14 (9), p.2315

2021

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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials, 2021-04, Vol.14 (9), p.2316

2021

Volltextzugriff (PDF)

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GaN-based power devices: Physics, reliability, and perspectives

Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Trap-state mapping to model GaN transistors dynamic performance

Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator

Laser-Based Lighting: Experimental Analysis and Perspectives

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Defect-Related Degradation of AlGaN-Based UV-B LEDs

Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

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