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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

Applied physics letters, 1991-05, Vol.58 (20), p.2291-2293

1991

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High voltage (450 V) GaN Schottky rectifiers

Applied physics letters, 1999-03, Vol.74 (9), p.1266-1268

1999

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Minority carrier diffusion length and lifetime in GaN

Applied physics letters, 1998-06, Vol.72 (24), p.3166-3168

1998

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Description of bulk inversion asymmetry in the effective-bond-orbital model

Physical review. B, Condensed matter, 2003-12, Vol.68 (23), Article 235319

2003

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Electron diffusion length and lifetime in p -type GaN

Applied physics letters, 1998-11, Vol.73 (22), p.3276-3278

1998

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Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

Applied physics letters, 1999-06, Vol.74 (23), p.3522-3524

1999

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New negative differential resistance device based on resonant interband tunneling

Applied physics letters, 1989-09, Vol.55 (11), p.1094-1096

1989

Volltextzugriff (PDF)

Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy

Applied physics letters, 1999-08, Vol.75 (9), p.1326-1328

1999

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An efficient multiband envelope function approximation method for spintronics

Nanotechnology, 2003-02, Vol.14 (2), p.308-311

2003

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Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy

Physical review letters, 1994-04, Vol.72 (17), p.2749-2752

1994

Volltextzugriff (PDF)

Lattice match: an application to heteroepitaxy

Journal of applied physics, 1984-01, Vol.55 (2), p.378-386

1984

Volltextzugriff (PDF)

The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Solid-state electronics, 2000-02, Vol.44 (2), p.221-228

2000

Volltextzugriff (PDF)

Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2003-07, Vol.21 (4), p.1745-1748

2003

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Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-05, Vol.17 (3), p.1241-1245

1999

Volltextzugriff (PDF)

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

IEEE transactions on electron devices, 2000-05, Vol.47 (5), p.1052-1060

2000

Volltextzugriff (PDF)

The role of materials in the electronics world of 2012 A.D.: An update

Proceedings of the IEEE, 1999, Vol.87 (5), p.924-926

McGill, T.C.

1999

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Growth and characterization of InAs/Ga1-xInxSb strained-layer superlattices

Applied physics letters, 1990-04, Vol.56 (15), p.1418-1420

1990

Volltextzugriff (PDF)

Schottky-based band lineups for refractory semiconductors

Applied physics letters, 1995-04, Vol.66 (15), p.1974-1976

1995

Volltextzugriff (PDF)

Numerical spurious solutions in the effective mass approximation

Journal of applied physics, 2003-04, Vol.93 (7), p.3974-3981

2003

Volltextzugriff (PDF)

Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Journal of crystal growth, 2000, Vol.208 (1), p.183-188

2000

Volltextzugriff (PDF)

Infrared optical characterization of InAs/Ga1-xInxSb superlattices

Applied physics letters, 1990-08, Vol.57 (8), p.801-803

1990

Volltextzugriff (PDF)

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

Applied physics letters, 1991-01, Vol.58 (3), p.275-277

1991

Volltextzugriff (PDF)

Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors

Applied physics letters, 1992-10, Vol.61 (16), p.1962-1964

1992

Volltextzugriff (PDF)

Experimental and theoretical study of ultra-thin oxides

Semiconductor science and technology, 1998-08, Vol.13 (8A), p.A155-A159

1998

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n-CdSe/p-ZnTe based wide band-gap light emitters : numerical simulation and design

Journal of applied physics, 1993-05, Vol.73 (9), p.4660-4668

1993

Volltextzugriff (PDF)

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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

High voltage (450 V) GaN Schottky rectifiers

Minority carrier diffusion length and lifetime in GaN

Description of bulk inversion asymmetry in the effective-bond-orbital model

Electron diffusion length and lifetime in p -type GaN

Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

New negative differential resistance device based on resonant interband tunneling

Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy

An efficient multiband envelope function approximation method for spintronics

Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy

Lattice match: an application to heteroepitaxy

The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection

Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

The role of materials in the electronics world of 2012 A.D.: An update

Growth and characterization of InAs/Ga1-xInxSb strained-layer superlattices

Schottky-based band lineups for refractory semiconductors

Numerical spurious solutions in the effective mass approximation

Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Infrared optical characterization of InAs/Ga1-xInxSb superlattices

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors

Experimental and theoretical study of ultra-thin oxides

n-CdSe/p-ZnTe based wide band-gap light emitters : numerical simulation and design

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