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Applied physics letters, 2006-04, Vol.88 (14)
2006
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IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6384-6387
2022
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IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4701-4704
2020
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Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.03SP12
2024
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IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1840-1851
2006
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Journal of physics. Condensed matter, 2018-09, Vol.30 (38), p.384002-384002
2018
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Applied physics letters, 2004-06, Vol.84 (25), p.5270-5272
2004
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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.253-256
2020
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2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T138-T139
2015
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Solid-state electronics, 2020-06, Vol.168, p.107736, Article 107736
2020
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IEEE transactions on electron devices, 2022, p.1-4
2022
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Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (24), Article 245301
2004
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Applied physics letters, 2004-12, Vol.85 (25), p.6188-6190
2004
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Materials science in semiconductor processing, 2017-05, Vol.62, p.2-12
2017
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2019 Symposium on VLSI Technology, 2019, p.T204-T205
2019
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Materials science in semiconductor processing, 2017-06, Vol.63, p.303-303
2017
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2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.27.5.1-27.5.4
2021
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2021 20th International Workshop on Junction Technology (IWJT), 2021, p.1-4
2021
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IEEE transactions on nanotechnology, 2006-07, Vol.5 (4), p.343-349
2006
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2020 IEEE Symposium on VLSI Technology, 2020, p.1-2
- Vandooren, A.
- Wu, Z.
- Parihar, N.
- Franco, J.
- Parvais, B.
- Matagne, P.
- Debruyn, H.
- Mannaert, G.
- Devriendt, K.
- Teugels, L.
- Vecchio, E.
- Radisic, D.
- Rosseel, E.
- Hikavyy, A.
- Chan, B. T.
- Waldron, N.
- Mitard, J.
- Besnard, G.
- Alvarez, A.
- Gaudin, G.
- Schwarzenbach, W.
- Radu, I.
- Nguyen, B. Y.
- Huet, K.
- Tabata, T.
- Mazzamuto, F.
- Demuynck, S.
- Boemmels, J.
- Collaert, N.
- Horiguchi, N.
2020
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European journal of anaesthesiology, 2014-06, Vol.31, p.226-227
2014
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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.118-119
2004
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Physical review. B, Condensed matter, 2002-02, Vol.65 (8), Article 085325
2002
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2016 IEEE Symposium on VLSI Technology, 2016, p.1-2
- Veloso, A.
- Parvais, B.
- Matagne, P.
- Simoen, E.
- Huynh-Bao, T.
- Paraschiv, V.
- Vecchio, E.
- Devriendt, K.
- Rosseel, E.
- Ercken, M.
- Chan, B. T.
- Delvaux, C.
- Altamirano-Sanchez, E.
- Versluijs, J. J.
- Tao, Z.
- Suhard, S.
- Brus, S.
- Sibaja-Hernandez, A.
- Waldron, N.
- Lagrain, P.
- Richard, O.
- Bender, H.
- Chasin, A.
- Kaczer, B.
- Ivanov, T.
- Ramesh, S.
- De Meyer, K.
- Ryckaert, J.
- Collaert, N.
- Thean, A.
2016
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2019 Symposium on VLSI Technology, 2019, p.T198-T199
- Kim, M.-S.
- Harada, N.
- Kikuchi, Y.
- Boemmels, J.
- Mitard, J.
- Huynh-Bao, T.
- Matagne, P.
- Tao, Z.
- Li, W.
- Devriendt, K.
- Ragnarsson, L.-A.
- Lorant, C.
- Sebaai, F.
- Porret, C.
- Rosseel, E.
- Dangol, A.
- Batuk, D.
- Martinez-Alanis, G.
- Geypen, J.
- Jourdan, N.
- Sepulveda, A.
- Puliyalil, H.
- Jamieson, G.
- van der Veen, M.
- Teugels, L.
- El-Mekki, Z.
- Altamirano-Sanchez, E.
- Li, Y.
- Nakamura, H.
- Mocuta, D.
- Masuoka, F.
2019
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