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Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopy

Nanotechnology, 2014-07, Vol.25 (26), p.265703-6

2014

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Quantitative mapping of high modulus materials at the nanoscale: comparative study between atomic force microscopy and nanoindentation

Journal of microscopy (Oxford), 2020-10, Vol.280 (1), p.51-62

2020

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Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Nanotechnology, 2013-03, Vol.24 (8), p.085706-085706

2013

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Lateral interband tunneling transistor in silicon-on-insulator

Applied physics letters, 2004-03, Vol.84 (10), p.1780-1782

2004

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An experimental method to determine the resistance of a vertically aligned carbon nanotube forest in contact with a conductive layer

Journal of applied physics, 2012-08, Vol.112 (4)

2012

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Aspects of lateral resolution in energy-filtered core level photoelectron emission microscopy

Journal of physics. Condensed matter, 2009-08, Vol.21 (31), p.314002-314002 (7)

2009

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Engineering the size and density of silicon agglomerates by controlling the initial surface carbonated contamination

Applied surface science, 2013-04, Vol.270, p.295-300

2013

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Energy-filtered XPEEM with NanoESCA using synchrotron and laboratory X-ray sources: Principles and first demonstrated results

Surface science, 2007-10, Vol.601 (20), p.4727-4732

2007

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Wetting an Oscillating Nanoneedle to Image an Air−Liquid Interface at the Nanometer Scale: Dynamical Behavior of a Nanomeniscus

Nano letters, 2006-11, Vol.6 (11), p.2554-2560

2006

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Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

Microelectronic engineering, 2006-11, Vol.83 (11), p.2169-2174

2006

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Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors

Solid-state electronics, 2021-10, Vol.184, p.108057, Article 108057

2021

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Integration of single carbon nanofibers in standard via interconnects

Applied physics letters, 2008-06, Vol.92 (22), p.223510-223510-3

2008

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Innovative scheme for selective carbon nanotubes integration in via structures

Microelectronic engineering, 2011-05, Vol.88 (5), p.833-836

2011

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Ultrathin silicon-on-insulator vertical tunneling transistor

Applied physics letters, 2003-08, Vol.83 (8), p.1653-1655

2003

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Raman Spectra and Imaging of Graphene Layers Grown by SiC Sublimation

XXII International Conference, 2010, Vol.1267, p.445-446

2010

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Effects of Experimental Parameters on the Work Function Measurement: A Kelvin Force Microscopy Study

2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2009, Vol.1173, p.224-228

2009

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Reduction of the cantilever hydrodynamic damping near a surface by ion-beam milling

Journal of applied physics, 2006-01, Vol.99 (2)

2006

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Evaluation of crystal quality and dopant activation of Smart Cut™- transferred 4H-SiC thin film

Materials science forum, 2023, Vol.1089, p.71-79

2023

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Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories

IEEE transactions on nanotechnology, 2004-03, Vol.3 (1), p.42-48

2004

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Size scaling of the addition spectra in silicon quantum dots

Physical review. B, Condensed matter and materials physics, 2005, Vol.71 (3), p.033305.1-033305.4, Article 033305

2005

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Toward the integration of a single carbon nanofibre as via interconnect

Microelectronic engineering, 2008-10, Vol.85 (10), p.1971-1974

2008

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Microstructure and electromigration in copper damascene lines

Microelectronics and reliability, 2000-01, Vol.40 (1), p.77-86

2000

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Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory

Solid-state electronics, 2003-10, Vol.47 (10), p.1645-1649

2003

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Plasma Surface Preparation of III-V Materials: Quasi In-Situ XPS Measurements and Integration Guidelines

ECS transactions, 2019-07, Vol.92 (2), p.73-83

2019

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Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers

Solid-state electronics, 2006-09, Vol.50 (9-10), p.1479-1482

2006

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Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopy

Quantitative mapping of high modulus materials at the nanoscale: comparative study between atomic force microscopy and nanoindentation

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Lateral interband tunneling transistor in silicon-on-insulator

An experimental method to determine the resistance of a vertically aligned carbon nanotube forest in contact with a conductive layer

Aspects of lateral resolution in energy-filtered core level photoelectron emission microscopy

Engineering the size and density of silicon agglomerates by controlling the initial surface carbonated contamination

Energy-filtered XPEEM with NanoESCA using synchrotron and laboratory X-ray sources: Principles and first demonstrated results

Wetting an Oscillating Nanoneedle to Image an Air−Liquid Interface at the Nanometer Scale: Dynamical Behavior of a Nanomeniscus

Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors

Integration of single carbon nanofibers in standard via interconnects

Innovative scheme for selective carbon nanotubes integration in via structures

Ultrathin silicon-on-insulator vertical tunneling transistor

Raman Spectra and Imaging of Graphene Layers Grown by SiC Sublimation

Effects of Experimental Parameters on the Work Function Measurement: A Kelvin Force Microscopy Study

Reduction of the cantilever hydrodynamic damping near a surface by ion-beam milling

Evaluation of crystal quality and dopant activation of Smart Cut™- transferred 4H-SiC thin film

Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories

Size scaling of the addition spectra in silicon quantum dots

Toward the integration of a single carbon nanofibre as via interconnect

Microstructure and electromigration in copper damascene lines

Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory

Plasma Surface Preparation of III-V Materials: Quasi In-Situ XPS Measurements and Integration Guidelines

Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers

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