UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 690

Sortiert nach

Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage

IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2781-2793

2019

Link zum Volltext
IEEE_Xplore

Semiconductor Power Devices: Physics, Characteristics, Reliability

2nd ed. 2018 edition., 2018

Link zum Volltext

Verfügbarkeit prüfen

Power cycling capability of silicon low-voltage MOSFETs under different operation conditions

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.495-498

2019

Link zum Volltext
IEEE_Xplore

Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices

IEEE transactions on power electronics, 2021-03, Vol.36 (3), p.2564-2573

2021

Link zum Volltext
IEEE_Xplore

Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.277-280

2013

Link zum Volltext
IEEE_Xplore

Some aspects on ruggedness of SiC power devices

Microelectronics and reliability, 2014-01, Vol.54 (1), p.49-56

2014

Link zum Volltext

Verfügbarkeit prüfen

Halbleiter-Leistungsbauelemente: Physik, Eigenschaften, Zuverlässigkeit

Lutz, Josef

Second Edition., 2012

Link zum Volltext

Verfügbarkeit prüfen

Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7451-7460

2021

Link zum Volltext
IEEE_Xplore

Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect

IEEE transactions on power electronics, 2023-01, Vol.38 (1), p.1-9

2023

Link zum Volltext
IEEE_Xplore

Dynamic avalanche in bipolar power devices

Microelectronics and reliability, 2012-03, Vol.52 (3), p.475-481

2012

Link zum Volltext

Verfügbarkeit prüfen

Measurement Error Caused by the Square Root t Method Applied to IGBT Devices during Power Cycling Test

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.545-548

2020

Link zum Volltext
IEEE_Xplore

GENERATING DEVICE FOR GENERATING A USEFUL STREAM OF A MEDIUM, IN PARTICULAR FOR GENERATING SOUND

The Journal of the Acoustical Society of America, 2012, Vol.132 (3), p.1863

Lutz, Josef

2012

Link zum Volltext

Verfügbarkeit prüfen

Dynamic avalanche and reliability of high voltage diodes

Microelectronics and reliability, 2003-04, Vol.43 (4), p.529-536

2003

Link zum Volltext

Verfügbarkeit prüfen

High cycle fatigue testing of Silicon IGBT devices under application-close conditions

IEEE transactions on power electronics, 2023-11, Vol.38 (11), p.1-9

2023

Link zum Volltext
IEEE_Xplore

Reliability and reliability investigation of wide-bandgap power devices

Microelectronics and reliability, 2018-09, Vol.88-90, p.550-556

2018

Link zum Volltext

Verfügbarkeit prüfen

Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test

IEEE transactions on power electronics, 2019-05, Vol.34 (5), p.4722-4728

2019

Link zum Volltext
IEEE_Xplore

Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices

Microelectronics and reliability, 2021-07, Vol.122, p.114161, Article 114161

2021

Link zum Volltext

Verfügbarkeit prüfen

The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection

IEEE transactions on power electronics, 2020-10, Vol.35 (10), p.10789-10798

2020

Link zum Volltext
IEEE_Xplore

Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditions

Microelectronics and reliability, 2023-11, Vol.150, p.115089, Article 115089

2023

Link zum Volltext

Verfügbarkeit prüfen

Halbleiter-Leistungsbauelemente: Physik, Eigenschaften, Zuverlässigkeit

Lutz, Josef

Link zum Volltext

Verfügbarkeit prüfen

Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in \hbox^- \hbox^ - \hbox^ Diodes

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2164-2172

2008

Link zum Volltext
IEEE_Xplore

Challenges Regarding Parallel Connection of SiC JFETs

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1449-1463

2013

Link zum Volltext
IEEE_Xplore

Requirements in power cycling for precise lifetime estimation

Microelectronics and reliability, 2016-03, Vol.58, p.82-89

2016

Link zum Volltext

Verfügbarkeit prüfen

The \hbox^-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2825-2832

2009

Link zum Volltext
IEEE_Xplore

Improving the short circuit ruggedness of IGBTs

Microelectronics and reliability, 2016-09, Vol.64, p.519-523

2016

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 690

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(426)
Mit Volltextzugriff
(612)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(534)
Deutsch
(164)
Japanisch
(70)
Französisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(347)
Life Sciences & Biomedicine
(235)
Humans
(164)
Male
(113)
Female
(107)
Technology
(91)
Biological And Medical Sciences
(80)
Engineering
(79)
Middle Aged
(69)
Engineering, Electrical & Electronic
(66)
Animals
(64)
Medical Sciences
(64)
Aged
(61)
Physical Sciences
(50)
Adult
(44)
Mice
(40)
Biochemistry & Molecular Biology
(36)
Neurosciences & Neurology
(35)
Physics
(34)
Temperature Measurement
(33)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage

Semiconductor Power Devices: Physics, Characteristics, Reliability

Power cycling capability of silicon low-voltage MOSFETs under different operation conditions

Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices

Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs

Some aspects on ruggedness of SiC power devices

Halbleiter-Leistungsbauelemente: Physik, Eigenschaften, Zuverlässigkeit

Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement

Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect

Dynamic avalanche in bipolar power devices

Measurement Error Caused by the Square Root t Method Applied to IGBT Devices during Power Cycling Test

GENERATING DEVICE FOR GENERATING A USEFUL STREAM OF A MEDIUM, IN PARTICULAR FOR GENERATING SOUND

Dynamic avalanche and reliability of high voltage diodes

High cycle fatigue testing of Silicon IGBT devices under application-close conditions

Reliability and reliability investigation of wide-bandgap power devices

Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test

Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices

The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection

Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditions

Halbleiter-Leistungsbauelemente: Physik, Eigenschaften, Zuverlässigkeit

Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in \hbox^- \hbox^ - \hbox^ Diodes

Challenges Regarding Parallel Connection of SiC JFETs

Requirements in power cycling for precise lifetime estimation

The \hbox^-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

Improving the short circuit ruggedness of IGBTs

Suchergebnisse filtern