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Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1010

2019

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Internal laser characteristics of optically pumped yellow-orange lasers

Physica Status Solidi. B: Basic Solid State Physics, 2016-08, Vol.253 (8), p.1490-1493

2016

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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Physica Status Solidi. B: Basic Solid State Physics, 2016-08, Vol.253 (8), p.1498-1502

2016

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Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Semiconductor science and technology, 2021-12, Vol.36 (12), p.125007

2021

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Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2020-07, Vol.217 (14), p.n/a

2020

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Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2

Physica status solidi. C, 2013-03, Vol.10 (3), p.532-535

2013

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers

Physica status solidi. C, 2013-03, Vol.10 (3), p.511-514

2013

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Internal parameters and optical properties of green II-VI heterostructure lasers with active region composed of multi-sheet electronically-coupled CdSe quantum dots

Physica status solidi. C, 2010-06, Vol.7 (6), p.1691-1693

2010

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InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

Journal of luminescence, 2018-02, Vol.194, p.797-802

2018

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In Al1–N/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

Journal of luminescence, 2018-02, Vol.194, p.797-802

2018

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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure: Microchip laser converter based on LD and QD heterostructure

physica status solidi (b), 2016-08, Vol.253 (8), p.1498-1502

2016

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Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

physica status solidi (b), 2010-06, Vol.247 (6), p.1557-1560

2010

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Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO 2

Physica status solidi. C, 2013-03, Vol.10 (3), p.532-535

2013

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Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO sub(2)

Physica status solidi. C, 2013-03, Vol.10 (3), p.532-535

2013

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al sub(2)O sub(3) epilayers

Physica status solidi. C, 2013-03, Vol.10 (3), p.511-514

2013

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers

Physica status solidi. C, 2013-03, Vol.10 (3), p.511-514

2013

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Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Physica status solidi. B. Basic research, 2010, Vol.247 (6), p.1557-1560

2010

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On the individuality of fingerprints

Proceedings - IEEE Computer Society Conference on Computer Vision and Pattern Recognition, 2001-01, Vol.1, p.I805-I812

2001

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High optical gain InGaN/GaN MQW electroluminescent heterostructures grown on silicon by MOCVD

2008 4th International Conference on Advanced Optoelectronics and Lasers, 2008, p.360-362

2008

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Alternative digital filltering scheme for LumiCal read-out

EPJ Web of Conferences, 2019, Vol.201, p.4004

2019

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Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Internal laser characteristics of optically pumped yellow-orange lasers

Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2

Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers

Internal parameters and optical properties of green II-VI heterostructure lasers with active region composed of multi-sheet electronically-coupled CdSe quantum dots

InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

In Al1–N/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure: Microchip laser converter based on LD and QD heterostructure

Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO 2

Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO sub(2)

Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al sub(2)O sub(3) epilayers

Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers

Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

On the individuality of fingerprints

High optical gain InGaN/GaN MQW electroluminescent heterostructures grown on silicon by MOCVD

Alternative digital filltering scheme for LumiCal read-out

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