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Age- and Stage-dependent Accumulation of Advanced Glycation End Products in Intracellular Deposits in Normal and Alzheimer's Disease Brains

Cerebral cortex (New York, N.Y. 1991), 2005-02, Vol.15 (2), p.211-220

2005

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MBE growth optimization of InN nanowires

Journal of crystal growth, 2006-04, Vol.290 (1), p.241-247

2006

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GaN-nanowhiskers: MBE-growth conditions and optical properties

Journal of crystal growth, 2006-03, Vol.289 (1), p.381-386

2006

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Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1517-1523

2006

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High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

Applied physics letters, 2005-10, Vol.87 (14)

2005

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Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

IEEE electron device letters, 2006-12, Vol.27 (12), p.945-947

2006

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Raman scattering on intrinsic surface electron accumulation of InN nanowires

Applied physics letters, 2010-08, Vol.97 (9)

2010

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Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.820-822

2006

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Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1725-1727

2005

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Solid Surfaces, Interfaces and Thin Films

Luth, Hans

5th ed., 2010

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Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Applied physics letters, 2003-01, Vol.82 (4), p.633-635

2003

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Electronic Phase Coherence in InAs Nanowires

Nano letters, 2011-09, Vol.11 (9), p.3550-3556

2011

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Penicillin detection by means of field-effect based sensors: EnFET, capacitive EIS sensor or LAPS?

Sensors and actuators. B, Chemical, 2001-08, Vol.78 (1), p.237-242

2001

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AlGaN/GaN HEMTs on (111) silicon substrates

IEEE electron device letters, 2002-01, Vol.23 (1), p.4-6

2002

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Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Applied physics letters, 2005-05, Vol.86 (21)

2005

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Expression of endothelial and inducible NOS-isoforms is increased in Alzheimer’s disease, in APP23 transgenic mice and after experimental brain lesion in rat: evidence for an induction by amyloid pathology

Brain research, 2001-09, Vol.913 (1), p.57-67

2001

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Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements

Nano letters, 2008-09, Vol.8 (9), p.3056-3059

2008

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Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Applied physics letters, 2007-03, Vol.90 (12), p.123117-123117-3

2007

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Giant Magnetoconductance Oscillations in Hybrid Superconductor−Semiconductor Core/Shell Nanowire Devices

Nano letters, 2014-11, Vol.14 (11), p.6269-6274

2014

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Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1)

Journal of crystal growth, 2005-10, Vol.283 (3), p.500-507

2005

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Metal cluster enhanced organic solar cells

Solar energy materials and solar cells, 2000-01, Vol.61 (1), p.97-105

2000

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Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Solid-state electronics, 2003-11, Vol.47 (11), p.2097-2103

2003

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Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires

Nano letters, 2005-05, Vol.5 (5), p.981-984

2005

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Hall effect measurements on InAs nanowires

Applied physics letters, 2012-10, Vol.101 (15)

2012

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied physics letters, 2005-06, Vol.86 (25)

2005

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Age- and Stage-dependent Accumulation of Advanced Glycation End Products in Intracellular Deposits in Normal and Alzheimer's Disease Brains

MBE growth optimization of InN nanowires

GaN-nanowhiskers: MBE-growth conditions and optical properties

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

Raman scattering on intrinsic surface electron accumulation of InN nanowires

Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates

Solid Surfaces, Interfaces and Thin Films

Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Electronic Phase Coherence in InAs Nanowires

Penicillin detection by means of field-effect based sensors: EnFET, capacitive EIS sensor or LAPS?

AlGaN/GaN HEMTs on (111) silicon substrates

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Expression of endothelial and inducible NOS-isoforms is increased in Alzheimer’s disease, in APP23 transgenic mice and after experimental brain lesion in rat: evidence for an induction by amyloid pathology

Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Giant Magnetoconductance Oscillations in Hybrid Superconductor−Semiconductor Core/Shell Nanowire Devices

Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1)

Metal cluster enhanced organic solar cells

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires

Hall effect measurements on InAs nanowires

Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

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