Sortiert nach
Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping
2016
Link zum Volltext
IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.754-760
2012
- Link zum Volltext
Japanese Journal of Applied Physics, 2014-03, Vol.53 (4S)
2014
Link zum Volltext
IEEE electron device letters, 2013-02, Vol.34 (2), p.286-288
2013
- Link zum Volltext
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.265-268
2015
- Link zum Volltext
Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2175
2007
Link zum Volltext
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.255-258
2019
- Link zum Volltext
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.56-59
2018
- Link zum Volltext
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.171-174
2013
- Link zum Volltext
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1
2017
Link zum Volltext
Applied physics letters, 2007-12, Vol.91 (26), p.262104-262104-3
2007
Link zum Volltext
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.403-406
2018
- Link zum Volltext
Materials science forum, 2013-01, Vol.740-742, p.711-714
2013
Link zum Volltext
IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.928-934
2001
- Link zum Volltext
Materials science forum, 2014, Vol.778-780, p.927-930
2014
Link zum Volltext
Materials science forum, 2012, Vol.717-720, p.1303-1306
2012
Link zum Volltext
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-09, Vol.26 (5), p.1282-1286
2008
Link zum Volltext
IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.854
2004
Link zum Volltext
MRS proceedings, 2012, Vol.1396 (1), p.239-244, Article mrsf11-1396-o07-45
2012
Link zum Volltext
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.217-220
2014
- Link zum Volltext
Microelectronic engineering, 2008, Vol.85 (1), p.45-48
2008
Link zum Volltext
Applied physics letters, 2006-06, Vol.88 (26), p.262909-262909-3
2006
Link zum Volltext
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2020, p.1-4
2020
Link zum Volltext
Applied physics letters, 2005-12, Vol.87 (26), p.262109-262109-3
2005
Link zum Volltext
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.48-49
2008
- Link zum Volltext
Suchergebnisse filtern
Filter anzeigenNur zeigen
Publikationsform
Erscheinungsjahr
n.n
n.n
Thema
- Science & Technology
- Technology
- Engineering
- Engineering, Electrical & Electronic
- Silicon Carbide
- Physical Sciences
- Physics
- Physics, Applied
- Mosfet
- Logic Gates
- Oxides
- Annealing
- Materials Science
- Mosfets
- Aluminum
- Computer Science
- Computer Science, Hardware & Architecture
- Devices
- Materials Science, Multidisciplinary
- Reliability
Kollektion
- IEEE Electronic Library Online
- IngentaConnect_期刊（NSTL购买）
- NUS Single-Journal Subscriptions
- American Institute of Physics
- Wiley Online Library
- SpringerLink (Online service)
- SpringerLINK Contemporary (Konsortium Baden-Württemberg)
- Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
- Journals@Ovid Full Text
- Elsevier ScienceDirect Journals Complete
- Ebook Central Perpetual and DDA
- eBooks on EBSCOhost
- IngentaConnect Journals
- Nexis
- EZB Electronic Journals Library
Zeitschrift / Serie
- Ieee Transactions On Electron Devices
- Japanese Journal Of Applied Physics
- Materials Science Forum
- Applied Physics Letters
- Electronics Letters
- Journal Of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films
- Ieee Transactions On Device And Materials Reliability
- Journal Of Materials Science. Materials In Electronics
- Microelectronic Engineering
- 2016 European Conference On Silicon Carbide & Related Materials