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Non-volatile, small-signal capacitance in ferroelectric capacitors

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3176-3180

2021

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A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.109-114

2022

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Design and Optimization of Non-Volatile Capacitive Crossbar Array for In-Memory Computing

IEEE transactions on circuits and systems. II, Express briefs, 2022-03, Vol.69 (3), p.784-788

2022

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Correlated Oxide Selector for Cross-Point Embedded Non-Volatile Memory

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.916-921

2024

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Nonvolatile Capacitive Crossbar Array for In‐Memory Computing

Advanced intelligent systems, 2022-08, Vol.4 (8), p.n/a

2022

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Scalable In-Memory Clustered Annealer With Temporal Noise of Charge Trap Transistor for Large Scale Travelling Salesman Problems

IEEE journal on emerging and selected topics in circuits and systems, 2023-03, Vol.13 (1), p.422-435

2023

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A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array

IEEE solid-state circuits letters, 2024, Vol.7, p.70-73

2024

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Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

IEEE journal on exploratory solid-state computational devices and circuits, 2021-12, Vol.7 (2), p.168-174

2021

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A Ferroelectric-Based Volatile/Non-Volatile Dual-Mode Buffer Memory for Deep Neural Network Accelerators

IEEE transactions on computers, 2022-09, Vol.71 (9), p.2088-2101

2022

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Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

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Ferroelectric Tunnel Junction Based Crossbar Array Design for Neuro-Inspired Computing

IEEE transactions on nanotechnology, 2021, Vol.20, p.243-247

2021

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Ferroelectric HfO2-based synaptic devices: recent trends and prospects

Semiconductor science and technology, 2021-10, Vol.36 (10)

2021

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Endurance-Aware Compiler for 3-D Stackable FeRAM as Global Buffer in TPU-Like Architecture

IEEE transactions on very large scale integration (VLSI) systems, 2024-09, Vol.32 (9), p.1696-1703

2024

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3-D Heterogeneous Integration of RRAM-Based Compute-In-Memory: Impact of Integration Parameters on Inference Accuracy

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.485-492

2023

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Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

IEEE electron device letters, 2023-10, Vol.44 (10), p.1628-1631

2023

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Beyond "Because It's There": Motivations for Pursuing Adventure Recreational Activities

Journal of leisure research, 2013-01, Vol.45 (1), p.91-111

2013

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Thermally Constrained Codesign of Heterogeneous 3-D Integration of Compute-in-Memory, Digital ML Accelerator, and RISC-V Cores for Mixed ML and Non-ML Workloads

IEEE transactions on very large scale integration (VLSI) systems, 2024-09, Vol.32 (9), p.1718-1725

2024

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Corrections to "A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array"

IEEE solid-state circuits letters, 2024, Vol.7, p.110-110

2024

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Compute-in-Memory: From Device Innovation to 3D System Integration

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.21-28

2021

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Modeling Multi-states in Ferroelectric Tunnel Junction

2020 Device Research Conference (DRC), 2020, p.1-2

2020

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Long-term phosphorus accumulation and agronomic and environmtal critical phosphorus levels in Haplic Luvisol soil, northern China

Journal of Integrative Agriculture, 2016-01, Vol.15 (1), p.200-208

XI Bin, ZHAI Li-mei, LIU Jian, LIU Shen, WANG Hong-yuan, LUO Chun-yan, REN Tian-zhi, LIU Hong-bin (Hainan Key Laboratory for Sustainable Utilization of Tropical Bioresources/Agricultural College, Hainan University, Haikou 570228, P.R.China State Key Laboratory of Rice Biology, China National Rice Research Institute, Chinese Academy of Agricultural Sciences, Hangzhou 310006, P.R.China State Key Laboratory of Plant Cell and Chromosome Engineering, Institute of Genetics and Developmental Biology, Chinese Academy of Sciences, Beijing 100101, P.R.China)

2016

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A Cross-Layer Framework for Design Space and Variation Analysis of Non-Volatile Ferroelectric Capacitor-Based Compute-in-Memory Accelerators

2024 29th Asia and South Pacific Design Automation Conference (ASP-DAC), 2024, p.159-164

2024

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(Invited) Ferroelectric Nonvolatile Capacitive Synapse for Charge Domain Compute-in-Memory

ECS transactions, 2024-05, Vol.113 (14), p.3-13

2024

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Design of Non-volatile Capacitive Crossbar Array for In-Memory Computing

2021 IEEE International Memory Workshop (IMW), 2021, p.1-4

2021

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Non-volatile, small-signal capacitance in ferroelectric capacitors

Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

Design and Optimization of Non-Volatile Capacitive Crossbar Array for In-Memory Computing

Correlated Oxide Selector for Cross-Point Embedded Non-Volatile Memory

Nonvolatile Capacitive Crossbar Array for In‐Memory Computing

Scalable In-Memory Clustered Annealer With Temporal Noise of Charge Trap Transistor for Large Scale Travelling Salesman Problems

A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array

Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

A Ferroelectric-Based Volatile/Non-Volatile Dual-Mode Buffer Memory for Deep Neural Network Accelerators

Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors

Ferroelectric Tunnel Junction Based Crossbar Array Design for Neuro-Inspired Computing

Ferroelectric HfO2-based synaptic devices: recent trends and prospects

Endurance-Aware Compiler for 3-D Stackable FeRAM as Global Buffer in TPU-Like Architecture

3-D Heterogeneous Integration of RRAM-Based Compute-In-Memory: Impact of Integration Parameters on Inference Accuracy

Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

Beyond "Because It's There": Motivations for Pursuing Adventure Recreational Activities

Thermally Constrained Codesign of Heterogeneous 3-D Integration of Compute-in-Memory, Digital ML Accelerator, and RISC-V Cores for Mixed ML and Non-ML Workloads

Corrections to "A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array"

Compute-in-Memory: From Device Innovation to 3D System Integration

Modeling Multi-states in Ferroelectric Tunnel Junction

Long-term phosphorus accumulation and agronomic and environmtal critical phosphorus levels in Haplic Luvisol soil, northern China

A Cross-Layer Framework for Design Space and Variation Analysis of Non-Volatile Ferroelectric Capacitor-Based Compute-in-Memory Accelerators

(Invited) Ferroelectric Nonvolatile Capacitive Synapse for Charge Domain Compute-in-Memory

Design of Non-volatile Capacitive Crossbar Array for In-Memory Computing

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