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Growth of bulk GaN crystals

Journal of applied physics, 2020-08, Vol.128 (5)

2020

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Semiconductor science and technology, 2016-09, Vol.31 (9), p.93002

2016

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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Journal of crystal growth, 2018-10, Vol.499, p.1-7

2018

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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.80-85

2016

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Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1030

2019

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Journal of crystal growth, 2014-10, Vol.403, p.48-54

2014

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Crystal growth of HVPE-GaN doped with germanium

Journal of crystal growth, 2017-12, Vol.480, p.102-107

2017

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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Journal of crystal growth, 2014-12, Vol.407, p.52-57

2014

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Homoepitaxial growth of HVPE-GaN doped with Si

Journal of crystal growth, 2016-12, Vol.456, p.91-96

2016

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Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Journal of crystal growth, 2016-12, Vol.456, p.86-90

2016

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Electrical characterization of HVPE GaN containing different concentrations of carbon dopants

Semiconductor science and technology, 2018-12, Vol.33 (12), p.125024

2018

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Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Applied physics letters, 2008-06, Vol.92 (23), p.231909-231909-3

2008

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HVPE-GaN growth on misoriented ammonothermal GaN seeds

Journal of crystal growth, 2014-10, Vol.403, p.32-37

2014

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Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Journal of crystal growth, 2017-10, Vol.475, p.121-126

2017

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Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Applied physics letters, 2005-01, Vol.86 (3), p.031915-031915-3

2005

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Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.5-10

2012

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Journal of crystal growth, 2016-12, Vol.456, p.73-79

2016

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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Journal of crystal growth, 2014-10, Vol.403, p.77-82

2014

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Revealing extended defects in HVPE-grown GaN

Journal of crystal growth, 2010-09, Vol.312 (18), p.2611-2615

2010

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GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

Journal of crystal growth, 2008-08, Vol.310 (17), p.3924-3933

2008

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Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2014-09, Vol.401, p.355-358

2014

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(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

ECS transactions, 2017-01, Vol.80 (10), p.991-1003

2017

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Electron spin resonance and Rashba field in GaN-based materials

Physica. B, Condensed matter, 2011-07, Vol.406 (13), p.2548-2554

2011

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High nitrogen pressure solution growth of GaN in multi feed-seed configuration

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.453-456

2012

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The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Journal of crystal growth, 2007-09, Vol.307 (2), p.298-301

2007

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Growth of bulk GaN crystals

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Crystal growth of HVPE-GaN doped with germanium

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Homoepitaxial growth of HVPE-GaN doped with Si

Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Electrical characterization of HVPE GaN containing different concentrations of carbon dopants

Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Revealing extended defects in HVPE-grown GaN

GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

Electron spin resonance and Rashba field in GaN-based materials

High nitrogen pressure solution growth of GaN in multi feed-seed configuration

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

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