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High performance continuous wave 1.3 μ m quantum dot lasers on silicon

Applied physics letters, 2014-01, Vol.104 (4), p.41104

2014

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High operating temperature nBn detector with monolithically integrated microlens

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

Journal of applied physics, 2020-07, Vol.128 (1)

2020

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-07, Vol.31 (4)

2013

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Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

IEEE electron device letters, 2012-11, Vol.33 (11), p.1568-1570

2012

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MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-03, Vol.32 (2)

2014

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Effect of substrate orientation on Sb-based MWIR photodetector characteristics

Infrared physics & technology, 2018-12, Vol.95, p.27-32

2018

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Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-05, Vol.37 (3)

2019

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Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers

Semiconductor science and technology, 2016-10, Vol.31 (10), p.105014

2016

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Molecular beam epitaxial growth and characterization of large-format GaSb-based IR photodetector structures [Invited]

Optical materials express, 2018-05, Vol.8 (5), p.1282

2018

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MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures

Journal of applied physics, 2009-01, Vol.105 (2)

2009

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Sb-based IR photodetector epiwafers on 100mm GaSb substrates manufactured by MBE

Infrared physics & technology, 2013-07, Vol.59, p.158-162

2013

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Characteristics of metal-ferroelectric-insulator-semiconductordiodes composed of Pt electrodes and epitaxial Sr 0.8 Bi 2.2 Ta 2 O 9 ( 001 ) / SrTiO 3 ( 100 ) / Si ( 100 ) structures

Journal of applied physics, 2009-01, Vol.105 (2), p.024111-024111-4

2009

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Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

MRS proceedings, 2009, Vol.1194 (1), p.1-9, Article 1194-A09-01

2009

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High performance continuous wave 1.3 μ m quantum dot lasers on silicon

High operating temperature nBn detector with monolithically integrated microlens

Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon

Effect of substrate orientation on Sb-based MWIR photodetector characteristics

Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration

Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers

Molecular beam epitaxial growth and characterization of large-format GaSb-based IR photodetector structures [Invited]

MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers

Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures

Sb-based IR photodetector epiwafers on 100mm GaSb substrates manufactured by MBE

Characteristics of metal-ferroelectric-insulator-semiconductordiodes composed of Pt electrodes and epitaxial Sr 0.8 Bi 2.2 Ta 2 O 9 ( 001 ) / SrTiO 3 ( 100 ) / Si ( 100 ) structures

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

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