UB Paderborn / Katalog / Suche / in CDI

A GaN HEMT Class F Amplifier at 2 GHz With >\,80% PAE

IEEE journal of solid-state circuits, 2007-10, Vol.42 (10), p.2130-2136

2007

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A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

IEEE microwave and wireless components letters, 2006-01, Vol.16 (1), p.22-24

2006

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Power Amplifier Selection for LINC Applications

IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 2006-08, Vol.53 (8), p.763-767

2006

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Submicron scaling of HBTs

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2606-2624

2001

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Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

IEEE journal of solid-state circuits, 2000-09, Vol.35 (9), p.1285-1292

2000

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A low power and low noise p-HEMT ku band VCO

IEEE microwave and wireless components letters, 2006-03, Vol.16 (3), p.131-133

2006

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Design analysis and circuit enhancements for high-speed bipolar flip-flops

IEEE journal of solid-state circuits, 2005-05, Vol.40 (5), p.1166-1174

2005

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A physically based analytic model of FET Class-E power amplifiers-designing for maximum PAE

IEEE transactions on microwave theory and techniques, 1999-09, Vol.47 (9), p.1712-1720

1999

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A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.96-99

2006

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New method to measure the source and drain resistance of the GaAs MESFET

IEEE electron device letters, 1986-02, Vol.7 (2), p.75-77

1986

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The effect of transistor feedback capacitance in class-E power amplifiers

IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 2003-12, Vol.50 (12), p.1556-1559

2003

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A 5GHz CMOS low phase noise transformer power combining VCO

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006, 2006, p.4 pp.-116

2006

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Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

Solid State Electronics, 1996-10, Vol.39 (10), p.1449-1455

1996

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Design of high-speed bipolar flip-flops for reduced clock loading

Electronics letters, 2006-03, Vol.42 (6), p.329-331

2006

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A 5 GHz pHEMT transformer-coupled VCO

2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers, 2005, p.135-138

2005

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A low phase noise InGaP-GaAs HBT transformer power combining VCO

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05, 2005, p.4 pp.

2005

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A low-power 128/spl times/1-bit GaAs FIFO for ATM packet switcher

IEEE journal of solid-state circuits, 1996-10, Vol.31 (10), p.1547-1555

1996

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Finite DC feed inductor in class E power amplifiers-a simplified approach

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1643-1646 vol.3

2002

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The prospects for ultrahigh-speed VLSI GaAs digital logic

IEEE transactions on electron devices, 1979-04, Vol.26 (4), p.299-317

1979

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Low power GaAs current-mode 1.2 Gb/s interchip interconnections

IEEE journal of solid-state circuits, 1997-06, Vol.32 (6), p.890-897

1997

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A low-power 128×1-bit GaAs FIFO for ATM packet switcher

IEEE journal of solid-state circuits, 1996-10, Vol.31 (10), p.1547-1555

1996

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A 2-GHz subharmonic sampler for signal downconversion

IEEE transactions on microwave theory and techniques, 1997-12, Vol.45 (12), p.2344-2351

1997

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48-GHz digital ICs and 85-GHz baseband amplifiers using transferred-substrate HBT's

IEEE journal of solid-state circuits, 1999-09, Vol.34 (9), p.1196-1203

1999

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Cascode-delay-matched distributed amplifiers for efficient broadband microwave power amplification

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.819-822 vol.2

1999

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Experimental analysis of transmission line parameters in high-speed GaAs digital circuit interconnects

IEEE transactions on microwave theory and techniques, 1991-08, Vol.39 (8), p.1361-1367

1991

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A GaN HEMT Class F Amplifier at 2 GHz With >\,80% PAE

A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

Power Amplifier Selection for LINC Applications

Submicron scaling of HBTs

Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

A low power and low noise p-HEMT ku band VCO

Design analysis and circuit enhancements for high-speed bipolar flip-flops

A physically based analytic model of FET Class-E power amplifiers-designing for maximum PAE

A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

New method to measure the source and drain resistance of the GaAs MESFET

The effect of transistor feedback capacitance in class-E power amplifiers

A 5GHz CMOS low phase noise transformer power combining VCO

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

Design of high-speed bipolar flip-flops for reduced clock loading

A 5 GHz pHEMT transformer-coupled VCO

A low phase noise InGaP-GaAs HBT transformer power combining VCO

A low-power 128/spl times/1-bit GaAs FIFO for ATM packet switcher

Finite DC feed inductor in class E power amplifiers-a simplified approach

The prospects for ultrahigh-speed VLSI GaAs digital logic

Low power GaAs current-mode 1.2 Gb/s interchip interconnections

A low-power 128×1-bit GaAs FIFO for ATM packet switcher

A 2-GHz subharmonic sampler for signal downconversion

48-GHz digital ICs and 85-GHz baseband amplifiers using transferred-substrate HBT's

Cascode-delay-matched distributed amplifiers for efficient broadband microwave power amplification

Experimental analysis of transmission line parameters in high-speed GaAs digital circuit interconnects

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