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Novel meta‐diamide insecticide, broflanilide, suppresses the population of common cutworm Spodoptera litura through its lethal and sublethal effects

Pest management science, 2022-03, Vol.78 (3), p.1081-1089

2022

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Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

Optoelectronics letters, 2020-03, Vol.16 (2), p.87-91

2020

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ZNRF1 Mediates Epidermal Growth Factor Receptor Ubiquitination to Control Receptor Lysosomal Trafficking and Degradation

Frontiers in cell and developmental biology, 2021-04, Vol.9, p.642625-642625

2021

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Preparation of pingyangmycin PLGA microspheres and related in vitro/in vivo studies

International journal of pharmaceutics, 2010-10, Vol.398 (1), p.130-136

2010

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Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer

Chinese physics letters, 2020-02, Vol.37 (2), p.27302

2020

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Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer

Chinese physics letters, 2019-05, Vol.36 (5), p.57301

2019

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Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Chinese physics B, 2020-01, Vol.29 (1), p.17301

2020

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Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2005-01, Vol.44 (4L), p.L505

2005

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Cultivation of Innovative Talents in Engineering Colleges

Applied Mechanics and Materials, 2013-10, Vol.448-453, p.4599-4602

Liu, Huai Yu

2013

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Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia

Physica status solidi. C, 2008-05, Vol.5 (6), p.1522-1524

2008

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Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia

Japanese Journal of Applied Physics, 2007-12, Vol.46 (12R), p.7693

2007

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Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy

Physica status solidi. C, 2006-06, Vol.3 (6), p.1479-1482

2006

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High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4450-4453

2002

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Enhanced emission efficiency of InGaN films with Si doping

Physica status solidi. C, 2006-06, Vol.3 (6), p.1944-1948

2006

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Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer

Japanese Journal of Applied Physics, 2002-10, Vol.41 (10A), p.L1037-L1039

2002

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AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4A), p.1588-1589

2003

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Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking LayerSupported by the National Natural Science Foundation of China under Grant No. 61176008, the Special Project for Intergovernment Collaboration of State Key Research and Development Program under Grant No. 2016YFE0118400, the Key Project of Science and Technology of Henan Province under Grant No. 172102410062, and the National Natural Science Foundation of China-Henan Prov

Chinese physics letters, 2020-02, Vol.37 (2)

2020

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Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking LayerSupported by the National Key Research and Development Program under Grant No 2016YFE0118400, the Key Project of Science and Technology of Henan Province under Grant No 172102410062, the National Natural Science Foundation of China under Grant No 61176008, and the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project under Grant No U1604263

Chinese physics letters, 2019-05, Vol.36 (5)

2019

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Anatomical Study on the Multi-Ovule Development and Abortion of Hanfu Apple

Journal of Integrative Agriculture, 2014-04, Vol.13 (4), p.770-777

2014

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Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layerProject supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Pr

Chinese physics B, 2020-01, Vol.29 (1)

2020

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A Bio-Inspired Hopping Kangaroo Robot with an Active Tail

Journal of bionics engineering, 2014-10, Vol.11 (4), p.541-555

2014

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The Design of a Voice Control System for Smart House

Applied Mechanics and Materials, 2014-09, Vol.644-650, p.741-745

2014

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Effects of PEG Molecular Weight on Its Interaction with Albumin

Chinese journal of polymer science, 2015-10, Vol.33 (10), p.1373-1379

2015

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Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals

Materials science forum, 2019-05, Vol.954, p.3-8

2019

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Kinetics of Atom Transfer Radical Polymerization of Methyl Methacrylate Initiated by Cellulose Chloroacetate in BMIMCI

高等学校化学研究（英文版）, 2013, Vol.29 (1), p.159-165

LIN Chun-xiang ZHAN Huai-yu LIU Ming-hua FU Shi-yu LUCIA Lucian

2013

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Novel meta‐diamide insecticide, broflanilide, suppresses the population of common cutworm Spodoptera litura through its lethal and sublethal effects

Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

ZNRF1 Mediates Epidermal Growth Factor Receptor Ubiquitination to Control Receptor Lysosomal Trafficking and Degradation

Preparation of pingyangmycin PLGA microspheres and related in vitro/in vivo studies

Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer

Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy

Cultivation of Innovative Talents in Engineering Colleges

Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia

Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia

Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy

High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

Enhanced emission efficiency of InGaN films with Si doping

Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer

AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

Anatomical Study on the Multi-Ovule Development and Abortion of Hanfu Apple

A Bio-Inspired Hopping Kangaroo Robot with an Active Tail

The Design of a Voice Control System for Smart House

Effects of PEG Molecular Weight on Its Interaction with Albumin

Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals

Kinetics of Atom Transfer Radical Polymerization of Methyl Methacrylate Initiated by Cellulose Chloroacetate in BMIMCI

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