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Ohmic contact formation on n -type Ge

Applied physics letters, 2008-01, Vol.92 (2), p.022106-022106-3

2008

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Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Anodic Etching of n‑GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties

Journal of physical chemistry. C, 2014-12, Vol.118 (51), p.29492-29498

2014

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Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching

Journal of physical chemistry. C, 2014-05, Vol.118 (21), p.11261-11266

2014

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Mg doping of GaN by molecular beam epitaxy

Journal of physics. D, Applied physics, 2011-04, Vol.44 (13), p.135406

2011

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Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4587-4593

2017

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Collapse of the low temperature insulating state in Cr-doped V2O3 thin films

Applied physics letters, 2015-09, Vol.107 (11)

2015

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Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

Thin solid films, 2012-05, Vol.520 (14), p.4730-4733

2012

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Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Photoluminescence of bulk germanium

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (3), Article 035204

2012

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Strain relaxation in GaN nanopillars

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications

Journal of applied physics, 2019-10, Vol.126 (14)

2019

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Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Applied physics letters, 2009-03, Vol.94 (11)

2009

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Carrier and heat transport properties of polycrystalline GeSn films on SiO2

Applied physics letters, 2015-12, Vol.107 (23)

2015

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Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DA07-4

2015

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Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

Journal of applied physics, 2016-12, Vol.120 (24)

2016

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Hydrogen and inert species in solid phase epitaxy

Applied physics letters, 2010-02, Vol.96 (5), p.052109-052109-3

2010

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Suppression of domain formation in GaN layers grown on Ge(1 1 1)

Journal of crystal growth, 2009-02, Vol.311 (5), p.1306-1310

2009

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Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2011, Vol.314 (1), p.71-75

2011

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Publisher's Note: “Collapse of the low temperature insulating state in Cr-doped V2O3 thin films” [Appl. Phys. Lett. 107 , 111904 (2015)]

Applied physics letters, 2015-10, Vol.107 (14)

2015

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Growth of GaN on Ge(111) by molecular beam epitaxy

Applied physics letters, 2006-12, Vol.89 (25), p.252118-252118-3

2006

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Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer

Journal of crystal growth, 2008-03, Vol.310 (6), p.1132-1136

2008

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Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy

CrystEngComm, 2013-01, Vol.15 (44), p.9121-9127

2013

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Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL10-08JL10-5

2013

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Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy

Applied physics letters, 2007-08, Vol.91 (9)

2007

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Ohmic contact formation on n -type Ge

Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films

Anodic Etching of n‑GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties

Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching

Mg doping of GaN by molecular beam epitaxy

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

Collapse of the low temperature insulating state in Cr-doped V2O3 thin films

Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

Photoluminescence of bulk germanium

Strain relaxation in GaN nanopillars

Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Carrier and heat transport properties of polycrystalline GeSn films on SiO2

Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

Hydrogen and inert species in solid phase epitaxy

Suppression of domain formation in GaN layers grown on Ge(1 1 1)

Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

Publisher's Note: “Collapse of the low temperature insulating state in Cr-doped V2O3 thin films” [Appl. Phys. Lett. 107 , 111904 (2015)]

Growth of GaN on Ge(111) by molecular beam epitaxy

Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer

Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy

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