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Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes

Applied physics letters, 2020-05, Vol.116 (19)

2020

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Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3

Applied physics letters, 2020-11, Vol.117 (22)

2020

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Thermal design of multi-fin Ga2O3 vertical transistors

Applied physics letters, 2021-09, Vol.119 (10)

2021

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Activation of buried p-GaN in MOCVD-regrown vertical structures

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1635-1641

2017

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1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

IEEE electron device letters, 2017-08, Vol.38 (8), p.1071-1074

2017

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β-Gallium oxide power electronics

APL materials, 2022-02, Vol.10 (2), p.029201-029201-40

2022

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Removal of Basic and Non-Basic Nitrogen Compounds from Model Oil by FeCl3-Based Ionic Liquids

中国炼油与石油化工（英文版）, 2022-12, Vol.24 (4), p.86-92

2022

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Electric field induced migration of native point defects in Ga2O3 devices

Journal of applied physics, 2023-01, Vol.133 (3)

2023

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Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Applied physics letters, 2022-03, Vol.120 (12)

2022

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Efficiency of energy recovery ventilator with various weathers and its energy saving performance in a residential apartment

Energy and buildings, 2010, Vol.42 (1), p.43-49

2010

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Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4597-4603

2019

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1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

Applied physics letters, 2018-11, Vol.113 (20)

2018

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Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

Applied physics letters, 2018-09, Vol.113 (12)

2018

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Removal of Benzothiophene by Extraction with Deep Eutectic Solvents [Bmim]Br-Polyalcohol

中国炼油与石油化工（英文版）, 2020-09, Vol.22 (3), p.49-55

2020

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Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD15

2019

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Evolutionary de Winter pattern: from STEMI to de Winter ECG—a case report

ESC Heart Failure, 2022-02, Vol.9 (1), p.771-774

2022

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Removal of Basic Nitrogen Compounds from Coker Diesel by Eutectic Ionic Liquid

中国炼油与石油化工（英文版）, 2018-09, Vol.20 (3), p.48-54

2018

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In Situ Trace Elemental Analyses of Scheelite from the Chuankou Deposit, South China: Implications for Ore Genesis

Minerals (Basel), 2020-11, Vol.10 (11), p.1007

2020

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Bitumen Recovery from Indonesian Oil Sands Using ASP(Alkali,Surfactant and Polymer)Agent

中国炼油与石油化工（英文版）, 2018-03, Vol.20 (1), p.110-115

2018

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Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

IEEE electron device letters, 2018-06, Vol.39 (6), p.869-872

2018

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GaN vertical nanowire and fin power MISFETs

2017 75th Annual Device Research Conference (DRC), 2017, p.1-2

2017

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ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2420-2426

2021

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600 V GaN vertical V-trench MOSFET with MBE regrown channel

2017 75th Annual Device Research Conference (DRC), 2017, p.1-2

2017

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Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2129

2023

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Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes

Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3

Thermal design of multi-fin Ga2O3 vertical transistors

Activation of buried p-GaN in MOCVD-regrown vertical structures

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

β-Gallium oxide power electronics

Removal of Basic and Non-Basic Nitrogen Compounds from Model Oil by FeCl3-Based Ionic Liquids

Electric field induced migration of native point defects in Ga2O3 devices

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Efficiency of energy recovery ventilator with various weathers and its energy saving performance in a residential apartment

Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

Removal of Benzothiophene by Extraction with Deep Eutectic Solvents [Bmim]Br-Polyalcohol

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

Evolutionary de Winter pattern: from STEMI to de Winter ECG—a case report

Removal of Basic Nitrogen Compounds from Coker Diesel by Eutectic Ionic Liquid

In Situ Trace Elemental Analyses of Scheelite from the Chuankou Deposit, South China: Implications for Ore Genesis

Bitumen Recovery from Indonesian Oil Sands Using ASP(Alkali,Surfactant and Polymer)Agent

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

GaN vertical nanowire and fin power MISFETs

ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping

600 V GaN vertical V-trench MOSFET with MBE regrown channel

Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

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