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Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant

Nano letters, 2017-07, Vol.17 (7), p.4255-4260

2017

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Impact of Outer Shell Structure and Localization Effects on Charge Carrier Dynamics in GaAs/(In,Ga)As Nanowire Core–Shell Quantum Wells

Physica status solidi. PSS-RRL. Rapid research letters, 2019-05, Vol.13 (5), p.n/a

2019

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Axial GaAs/Ga(As, Bi) nanowire heterostructures

Nanotechnology, 2019-10, Vol.30 (42), p.425601-425601

2019

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Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core–Shell Heterostructures

Nano letters, 2018-04, Vol.18 (4), p.2343-2350

2018

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Diameter evolution of selective area grown Ga-assisted GaAs nanowires

Nano research, 2018-05, Vol.11 (5), p.2885-2893

2018

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Predictive model for the temporal evolution of the shape of GaAs nanowires

Journal of crystal growth, 2020-02, Vol.531, p.125320, Article 125320

2020

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Transition from elastic to plastic strain release in core-shell nanowires revealed by in-plane x-ray diffraction

Nanotechnology, 2021-05, Vol.32 (20), p.205705-205705

2021

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Excitonic Aharonov–Bohm Oscillations in Core–Shell Nanowires

Advanced materials (Weinheim), 2019-01, Vol.31 (3), p.e1805645-n/a

2019

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Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability

Physical review letters, 2017-08, Vol.119 (8), p.086101-086101, Article 086101

2017

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Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Semiconductor science and technology, 2019-10, Vol.34 (10), p.105016

2019

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Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

Semiconductor science and technology, 2017-11, Vol.32 (11), p.115003

2017

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Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells

ACS applied materials & interfaces, 2021-10, Vol.13 (42), p.50220-50227

2021

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X‐ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

Journal of applied crystallography, 2020-10, Vol.53 (5), p.1310-1320

2020

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Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

Nanotechnology, 2017-10, Vol.28 (41), p.415703-415703

2017

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Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core–shell–shell nanowires by means of in‐plane and out‐of‐plane X‐ray nanodiffraction

Journal of applied crystallography, 2018-10, Vol.51 (5), p.1387-1395

2018

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Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X‐ray diffraction imaging

Journal of applied crystallography, 2017-06, Vol.50 (3), p.673-680

2017

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Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

ACS applied nano materials, 2020-01, Vol.3 (1), p.165-174

2020

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Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Physical review. B, 2017-07, Vol.96 (4), Article 045435

2017

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Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

Physical review. B, 2016-10, Vol.94 (15), p.155413, Article 155413

2016

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Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors

ACS applied nano materials, 2021-10, Vol.4 (10), p.10164-10172

2021

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Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

Semiconductor science and technology, 2023-09, Vol.38 (9), p.95009

2023

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Phosphorus-Controlled Nanoepitaxy of Asymmetric GaAs–InP Core–Shell Bent Nanowires: Implications for Bottom-Up Nanowire Transistors and Sensors

ACS applied nano materials, 2024-01, Vol.7 (1), p.1257-1264

2024

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Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices

ACS applied nano materials, 2023-08, Vol.6 (16), p.15278-15293

2023

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Closed-cycle cooling of cryopanels in molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-03, Vol.32 (2)

2014

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Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging1

Journal of applied crystallography, 2017-04, Vol.50 (Pt 3), p.673-680

2017

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Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant

Impact of Outer Shell Structure and Localization Effects on Charge Carrier Dynamics in GaAs/(In,Ga)As Nanowire Core–Shell Quantum Wells

Axial GaAs/Ga(As, Bi) nanowire heterostructures

Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core–Shell Heterostructures

Diameter evolution of selective area grown Ga-assisted GaAs nanowires

Predictive model for the temporal evolution of the shape of GaAs nanowires

Transition from elastic to plastic strain release in core-shell nanowires revealed by in-plane x-ray diffraction

Excitonic Aharonov–Bohm Oscillations in Core–Shell Nanowires

Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells

X‐ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core–shell–shell nanowires by means of in‐plane and out‐of‐plane X‐ray nanodiffraction

Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X‐ray diffraction imaging

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors

Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

Phosphorus-Controlled Nanoepitaxy of Asymmetric GaAs–InP Core–Shell Bent Nanowires: Implications for Bottom-Up Nanowire Transistors and Sensors

Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices

Closed-cycle cooling of cryopanels in molecular beam epitaxy

Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging1

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