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A Graphene Field-Effect Device

IEEE electron device letters, 2007-04, Vol.28 (4), p.282-284

2007

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Nonvolatile Switching in Graphene Field-Effect Devices

IEEE electron device letters, 2008-08, Vol.29 (8), p.952-954

2008

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Current Status of Graphene Transistors

Solid state phenomena, 2009-10, Vol.156-158, p.499-509

Lemme, M.C.

2009

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Navigation aids in the search for future high- k dielectrics: Physical and electrical trends

Solid-state electronics, 2007-04, Vol.51 (4), p.622-626

2007

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DFT study of graphene doping due to metal contacts

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Solid-state electronics, 2008-09, Vol.52 (9), p.1274-1279

2008

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A Resonant Graphene NEMS Vibrometer

Small (Weinheim an der Bergstrasse, Germany), 2022-07, Vol.18 (28), p.e2201816-n/a

2022

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Influence of Humidity on Contact Resistance in Graphene Devices

ACS applied materials & interfaces, 2018-12, Vol.10 (48), p.41738-41746

2018

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The Schottky barrier transistor in emerging electronic devices

Nanotechnology, 2023-08, Vol.34 (35), p.352002

2023

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Graphene transfer methods for the fabrication of membrane-based NEMS devices

Microelectronic engineering, 2016-06, Vol.159, p.108-113

2016

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Improved understanding of metal–graphene contacts

Microelectronic engineering, 2019-08, Vol.216, p.111035, Article 111035

2019

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Going ballistic: Graphene hot electron transistors

Solid state communications, 2015-12, Vol.224, p.64-75

2015

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Mobility in graphene double gate field effect transistors

Solid-state electronics, 2008-04, Vol.52 (4), p.514-518

2008

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Nickel-silicide process for ultra-thin-body SOI-MOSFETs

Microelectronic engineering, 2005-12, Vol.82 (3), p.497-502

2005

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Large scale integration of graphene transistors for potential applications in the back end of the line

Solid-state electronics, 2015-06, Vol.108, p.61-66

2015

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Mobility extraction in SOI MOSFETs with sub 1 nm body thickness

Solid-state electronics, 2009-12, Vol.53 (12), p.1246-1251

2009

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Overlay accuracy limitations of soft stamp UV nanoimprint lithography and circumvention strategies for device applications

Microelectronic engineering, 2018-10, Vol.197, p.83-86

2018

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All CVD Boron Nitride Encapsulated Graphene FETs

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

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Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Microelectronic engineering, 2006-04, Vol.83 (4), p.1170-1173

2006

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Leakage current effects on C - V plots of high- k metal-oxide-semiconductor capacitors

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.352-355

2009

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Nanoscale TiN metal gate technology for CMOS integration

Microelectronic engineering, 2006-04, Vol.83 (4), p.1551-1554

2006

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Gd silicate: A high- k dielectric compatible with high temperature annealing

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.249-252