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Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Design and Fabrication of 4H-SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.754-760

2012

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Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method

Japanese Journal of Applied Physics, 2014-03, Vol.53 (4S)

2014

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Demonstration of Lateral IGBTs in 4H-SiC

IEEE electron device letters, 2013-02, Vol.34 (2), p.286-288

2013

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1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.265-268

2015

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Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2175

2007

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Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.255-258

2019

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High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.45-48

2017

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Radiation Influence Comparison between SiC JMOS and DMOS

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.146-149

2020

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A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.171-174

2013

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Negative bias temperature instability on subthreshold swing of SiC MOSFET

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Cerium oxide nanocrystals for nonvolatile memory applications

Applied physics letters, 2007-12, Vol.91 (26), p.262104-262104-3

2007

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SiC MOSFET with Integrated Zener Diode as an Asymmetric Bidirectional Voltage Clamp Between the Gate and Source for Overvoltage Protection

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.135-138

2019

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High accuracy large-signal SPICE model for silicon carbide MOSFET

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.403-406

2018

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Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Materials science forum, 2013-01, Vol.740-742, p.711-714

2013

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Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.928-934

2001

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SiC Epi-Channel Lateral MOSFETs

Materials science forum, 2014, Vol.778-780, p.927-930

2014

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Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues

Materials science forum, 2012, Vol.717-720, p.1303-1306

2012

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Feedback control of HfO2 etch processing in inductively coupled Cl2/N2/Ar plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-09, Vol.26 (5), p.1282-1286

2008

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High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.854

2004

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(Invited) Innovative Wide Band Gap Power Devices Achievements in ITRI

ECS transactions, 2013, Vol.52 (1), p.11-16

2013

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Performance Comparison and Design Issue on Different GaN Power Transistor Structures

MRS proceedings, 2012, Vol.1396 (1), p.239-244, Article mrsf11-1396-o07-45

2012

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Characteristics improvement of 4H-SiC using termination with P-Well enclosure in P-Plus floating guard rings for 1700V DMOSFETs

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.217-220

2014

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High-quality high- k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories

Microelectronic engineering, 2008, Vol.85 (1), p.45-48

2008

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Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

Applied physics letters, 2006-06, Vol.88 (26), p.262909-262909-3

2006

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Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Design and Fabrication of 4H-SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method

Demonstration of Lateral IGBTs in 4H-SiC

1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS

High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier

Radiation Influence Comparison between SiC JMOS and DMOS

A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

Negative bias temperature instability on subthreshold swing of SiC MOSFET

Cerium oxide nanocrystals for nonvolatile memory applications

SiC MOSFET with Integrated Zener Diode as an Asymmetric Bidirectional Voltage Clamp Between the Gate and Source for Overvoltage Protection

High accuracy large-signal SPICE model for silicon carbide MOSFET

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

SiC Epi-Channel Lateral MOSFETs

Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues

Feedback control of HfO2 etch processing in inductively coupled Cl2/N2/Ar plasmas

High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing

(Invited) Innovative Wide Band Gap Power Devices Achievements in ITRI

Performance Comparison and Design Issue on Different GaN Power Transistor Structures

Characteristics improvement of 4H-SiC using termination with P-Well enclosure in P-Plus floating guard rings for 1700V DMOSFETs

High-quality high- k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories

Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

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