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Artificial Neuron and Synapse Devices Based on 2D Materials

Small (Weinheim an der Bergstrasse, Germany), 2021-05, Vol.17 (20), p.e2100640-n/a

2021

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Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Advanced materials (Weinheim), 2017-08, Vol.29 (30), p.n/a

2017

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Effective Separation of CO2 Using Metal‐Incorporated rGO Membranes

Advanced materials (Weinheim), 2020-04, Vol.32 (17), p.e1907580-n/a

2020

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Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

Applied physics letters, 2011-12, Vol.99 (24), p.243114-243114-3

2011

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Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Nature nanotechnology, 2015-06, Vol.10 (6), p.534-540

2015

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Effect of defects on the intrinsic strength and stiffness of graphene

Nature communications, 2014-01, Vol.5 (1), p.3186-3186, Article 3186

2014

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Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Nature communications, 2013, Vol.4 (1), p.1624-1624, Article 1624

2013

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Ferroelectric‐Polymer‐Enabled Contactless Electric Power Generation in Triboelectric Nanogenerators

Advanced functional materials, 2019-11, Vol.29 (45), p.n/a

2019

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Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique

ACS applied materials & interfaces, 2015-11, Vol.7 (46), p.25923-25929

2015

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Low Onset‐Potential Z‐Scheme Ta3N5‐based Photoanode with Enhanced Light Harvesting and Charge Transport

Advanced energy materials, 2024-02, Vol.14 (5), p.n/a

2024

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High-Strength Chemical-Vapor—Deposited Graphene and Grain Boundaries

Science (American Association for the Advancement of Science), 2013-05, Vol.340 (6136), p.1073-1076

2013

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2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

2d materials, 2020-02, Vol.7 (2), p.22003

2020

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Angstrom‐Confined Electrochemical Synthesis of Sub‐Unit‐Cell Non‐Van Der Waals 2D Metal Oxides

Advanced materials (Weinheim), 2023-07, Vol.35 (30), p.e2301506-n/a

2023

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Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Nano letters, 2015-08, Vol.15 (8), p.5017-5024

2015

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Interactions between Primary Neurons and Graphene Films with Different Structure and Electrical Conductivity

Advanced functional materials, 2021-03, Vol.31 (11), p.n/a

2021

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Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices

Small (Weinheim an der Bergstrasse, Germany), 2022-07, Vol.18 (28), p.e2200882-n/a

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2022-10, Vol.34 (41), p.n/a

2022

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Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

Advanced materials (Weinheim), 2019-09, Vol.31 (39), p.e1903424-n/a

2019

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Anomalous Dimensionality‐Driven Phase Transition of MoTe2 in Van der Waals Heterostructure

Advanced functional materials, 2021-12, Vol.31 (51), p.n/a

2021

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Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors

Advanced materials (Weinheim), 2024-04, Vol.36 (14), p.e2310498-n/a

2024

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Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Advanced functional materials, 2014-08, Vol.24 (32), p.5157-5163

2014

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Enhanced graphitic domains of unreduced graphene oxide and the interplay of hydration behaviour and catalytic activity

Materials today (Kidlington, England), 2021-11, Vol.50, p.44-54

2021

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Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Nature communications, 2018-09, Vol.9 (1), p.3988-9, Article 3988

2018

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Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit

Advanced materials (Weinheim), 2024-07, Vol.36 (29), p.e2314274-n/a

2024

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Laser‐Induced Phase Transition and Patterning of hBN‐Encapsulated MoTe2

Small (Weinheim an der Bergstrasse, Germany), 2023-04, Vol.19 (17), p.e2205224-n/a

2023

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Artificial Neuron and Synapse Devices Based on 2D Materials

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Effective Separation of CO2 Using Metal‐Incorporated rGO Membranes

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Effect of defects on the intrinsic strength and stiffness of graphene

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Ferroelectric‐Polymer‐Enabled Contactless Electric Power Generation in Triboelectric Nanogenerators

Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique

Low Onset‐Potential Z‐Scheme Ta3N5‐based Photoanode with Enhanced Light Harvesting and Charge Transport

High-Strength Chemical-Vapor—Deposited Graphene and Grain Boundaries

2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

Angstrom‐Confined Electrochemical Synthesis of Sub‐Unit‐Cell Non‐Van Der Waals 2D Metal Oxides

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Interactions between Primary Neurons and Graphene Films with Different Structure and Electrical Conductivity

Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

Anomalous Dimensionality‐Driven Phase Transition of MoTe2 in Van der Waals Heterostructure

Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Enhanced graphitic domains of unreduced graphene oxide and the interplay of hydration behaviour and catalytic activity

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit

Laser‐Induced Phase Transition and Patterning of hBN‐Encapsulated MoTe2

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