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Ga2O3‑on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

ACS applied materials & interfaces, 2021-09, Vol.13 (34), p.40817-40829

2021

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Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Scientific reports, 2013-10, Vol.3 (1), p.2963-2963, Article 2963

2013

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Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results

Materials, 2018-09, Vol.11 (10), p.1800

2018

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Ultra-Wide Band Gap Ga2O3‑on-SiC MOSFETs

ACS applied materials & interfaces, 2023-02, Vol.15 (5), p.7137-7147

2023

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Ultra-Wide Band Gap Ga 2 O 3 -on-SiC MOSFETs

ACS applied materials & interfaces, 2023-02, Vol.15 (5), p.7137-7147

2023

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Study of interface trap density of AlOxNy/GaN MOS structures

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1140-1150

2010

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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Journal of applied physics, 2021-09, Vol.130 (11)

2021

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2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.604-607

2014

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Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1127-1139

2010

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Photo-Hall-effect study of excitation and recombination in Fe-doped GaN

Journal of applied physics, 2017-02, Vol.121 (6)

2017

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Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Journal of applied physics, 2021-07, Vol.130 (4)

2021

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Growth-microstructure-thermal property relations in AlN thin films

Journal of applied physics, 2022-11, Vol.132 (17)

2022

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Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Physica status solidi. B, Basic research, 2017-08, Vol.254 (8), p.n/a

2017

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Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate

ECS journal of solid state science and technology, 2022-11, Vol.11 (11), p.115008

2022

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The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

Journal of applied physics, 2013-06, Vol.113 (21)

2013

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High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Applied physics letters, 2007-09, Vol.91 (13)

2007

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The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates

Journal of electronic packaging, 2020-12, Vol.142 (4)

2020

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Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

ACS applied energy materials, 2019-12, Vol.2 (12), p.8405-8410

2019

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Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs

Physica status solidi. C, 2011-05, Vol.8 (5), p.1539-1543

2011

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Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Journal of applied physics, 2010-01, Vol.107 (1), p.014508-014508-5

2010

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Microstructure and field mapping of AlInN-based heterostructures and devices

Physica status solidi. C, 2010-10, Vol.7 (10), p.2436-2439

2010

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Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

IEEE electron device letters, 2010-09, Vol.31 (9), p.1041-1043

2010

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On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: Application to Fe-doped GaN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-07, Vol.34 (4)

2016

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HVPE GaN for high power electronic Schottky diodes

Solid-state electronics, 2013-01, Vol.79, p.238-243

2013

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Ga2O3‑on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results

Ultra-Wide Band Gap Ga2O3‑on-SiC MOSFETs

Ultra-Wide Band Gap Ga 2 O 3 -on-SiC MOSFETs

Study of interface trap density of AlOxNy/GaN MOS structures

Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures

Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Photo-Hall-effect study of excitation and recombination in Fe-doped GaN

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Growth-microstructure-thermal property relations in AlN thin films

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate

The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Microstructure and field mapping of AlInN-based heterostructures and devices

Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: Application to Fe-doped GaN

HVPE GaN for high power electronic Schottky diodes

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