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Self-paced exercise is less physically challenging than enforced constant pace exercise of the same intensity: influence of complex central metabolic control

British journal of sports medicine, 2009-10, Vol.43 (10), p.789-795

2009

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FinFET Mismatch in Subthreshold Region: Theory and Experiments

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2848-2856

2010

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Physiological responses to self-paced exercise: effort-matched comparisons across running and rowing modalities

Journal of sports medicine and physical fitness, 2012-08, Vol.52 (4), p.344

2012

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Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1583-1593

2011

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Patu™ Meke Meter: Use in the Classroom

New Zealand journal of educational studies, 2019-11, Vol.54 (2), p.327-344

2019

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Matching Performance of FinFET Devices With Fin Widths Down to 10 nm

IEEE electron device letters, 2009-12, Vol.30 (12), p.1374-1376

2009

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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Solid-state electronics, 2009-07, Vol.53 (7), p.760-766

2009

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Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.334-337

2008

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On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

Semiconductor science and technology, 1997-09, Vol.12 (9), p.1064-1071

1997

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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of applied physics, 2011-12, Vol.110 (12), p.124503-124503-6

2011

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

2007 IEEE Symposium on VLSI Technology, 2007, p.110-111

2007

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The Influence of TiN Thickness and \hbox Formation Method on the Structural and Electrical Properties of \hbox/ \hbox/\hbox Gate Stacks

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1548-1553

2009

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Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

Microelectronics and reliability, 2005-05, Vol.45 (5-6), p.779-782

2005

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The Influence of TiN Thickness and Si02 Formation Method on the Structural and Electrical Properties of TiN/HfO2/SiO2 Gate Stacks

IEEE transactions on electron devices, 2009, Vol.56 (7), p.1548-1553

2009

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Ion implantation for low-resistive source/drain contacts in FinFET devices

MRS proceedings, 2008, Vol.1070, Article 1070-E02-01

2008

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Improved effective mobility extraction in MOSFETs: Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009

Solid-state electronics, 2009, Vol.53 (12), p.1252-1256

2009

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High hole mobilities in fully-strained Si(1-x)Ge(x ) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1826-1832

2001

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Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3<x<0.4) grown on Si

Journal of applied physics, 2000-08, Vol.88 (4), p.2016-2023

2000

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Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

Applied physics letters, 1999-03, Vol.74 (9), p.1245-1247

1999

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High hole mobilities in fully-strained Si sub(1-x)Ge sub(x) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1826-1832

2001

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Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K

Journal of applied physics, 1997-11, Vol.82 (10), p.5210-5216

1997

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Low frequency noise measurements of p-channel Si)1-x)Ge)x) MOSFET' s

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Hommage. The Venezuelan Society for the History of Medicine

Revista de la Sociedad Venezolana de Historia de la Medicina, 1988, Vol.37 (55), p.177

Manrique Lander, P J

1988

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Biography: Dr. Carlos Arvelo Echeandia, Roctor of the Central University of Venezuela

Revista de la Sociedad Venezolana de Historia de la Medicina, 1988, Vol.37 (55), p.183

Manrique Lander, P J

1988

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Self-paced exercise is less physically challenging than enforced constant pace exercise of the same intensity: influence of complex central metabolic control

FinFET Mismatch in Subthreshold Region: Theory and Experiments

Physiological responses to self-paced exercise: effort-matched comparisons across running and rowing modalities

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

Patu™ Meke Meter: Use in the Classroom

Matching Performance of FinFET Devices With Fin Widths Down to 10 nm

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Improved effective mobility extraction in MOSFETs

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

The Influence of TiN Thickness and \hbox Formation Method on the Structural and Electrical Properties of \hbox/ \hbox/\hbox Gate Stacks

Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

The Influence of TiN Thickness and Si02 Formation Method on the Structural and Electrical Properties of TiN/HfO2/SiO2 Gate Stacks

Ion implantation for low-resistive source/drain contacts in FinFET devices

Improved effective mobility extraction in MOSFETs: Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009

High hole mobilities in fully-strained Si(1-x)Ge(x ) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3<x<0.4) grown on Si

Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

High hole mobilities in fully-strained Si sub(1-x)Ge sub(x) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K

Low frequency noise measurements of p-channel Si)1-x)Ge)x) MOSFET' s

Hommage. The Venezuelan Society for the History of Medicine

Biography: Dr. Carlos Arvelo Echeandia, Roctor of the Central University of Venezuela

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