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Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Journal of crystal growth, 2016-01, Vol.433, p.36-42

2016

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Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Physical review. B, 2017-03, Vol.95 (12), p.125314, Article 125314

2017

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Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Journal of physics. Condensed matter, 2010-09, Vol.22 (35), p.355802-355802

2010

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Plasma-assisted molecular-beam epitaxy of AlN(112¯2) on m sapphire

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering

Journal of crystal growth, 2010-09, Vol.312 (19), p.2689-2694

2010

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Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Interband and intersubband optical characterization of semipolar ( 11 2 ¯ 2 ) -oriented GaN/AlN multiple-quantum-well structures

Applied physics letters, 2008-09, Vol.93 (11), p.111906-111906-3

2008

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Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN

Journal of applied physics, 2010-11, Vol.108 (10)

2010

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Plasma-assisted MBE growth of (11$ bar 2 $2)-oriented GaN/AlN quantum wells on m-sapphire

Physica Status Solidi (b), 2008-05, Vol.245 (5), p.884-886

2008

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P-type doping of semipolar GaN(11$ bar 2 $2) by plasma-assisted molecular-beam epitaxy

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1913-1915

2010

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Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

Physica status solidi. C, 2010-01, Vol.7 (1), p.100-103

2010

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Room-Temperature Transport of Indirect Excitons in ( Al , Ga ) N / GaN Quantum Wells

Physical review applied, 2016-07, Vol.6 (1), Article 014011

2016

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Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE

physica status solidi (b), 2010-07, Vol.247 (7), p.1637-1640

2010

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Mg doping and its effect on the semipolar GaN ( 11 2 ¯ 2 ) growth kinetics

Applied physics letters, 2009-10, Vol.95 (17), p.171908-171908-3

2009

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Earth-abundant ZnSnxGe1−xN2 alloys as potential photovoltaic absorber materials

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.003204-003207

2012

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Stranski-Krastanow growth of ( 11 2 ¯ 2 ) -oriented GaN/AlN quantum dots

Applied physics letters, 2009-03, Vol.94 (11), p.111901-111901-3

2009

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Ga kinetics in plasma-assisted molecular-beam epitaxy of Ga N ( 11 2 ¯ 2 ) : Effect on the structural and optical properties

Journal of applied physics, 2008-05, Vol.103 (9), p.093514-093514-10

2008

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Morphology and strain of self-assembled semipolar GaN quantum dotsin ( 11 2 ¯ 2 ) AlN

Journal of applied physics, 2010-11, Vol.108 (10), p.104304-104304-9

2010

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Plasma-assisted molecular-beam epitaxy of Al N ( 11 2 ¯ 2 ) on m sapphire

Applied physics letters, 2007-03, Vol.90 (13), p.131909-131909-3

2007

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Molecular beam epitaxy of semipolar AlN() and GaN() on m-sapphire

Journal of materials science. Materials in electronics, 2008, Vol.19 (8-9), p.805-809

2008

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Interfacial structure of semipolar AIN grown on m-plane sapphire by MBE

Physica status solidi. B. Basic research, 2010, Vol.247 (7), p.1637-1640

2010

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Plasma-assisted MBE growth of (1122)-oriented GaN/AIN quantum wells on m-sapphire

Physica status solidi. B. Basic research, 2008, Vol.245 (5), p.884-886

2008

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Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

Microelectronics, 2009-02, Vol.40 (2), p.336-338

2009

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PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire

Microelectronics, 2009-02, Vol.40 (2), p.325-327

2009

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P1.14-19 Exome Analysis of Patients Treated with Afatinib Reveals Genetic Variations Discriminating Extreme Responders

Journal of thoracic oncology, 2019-10, Vol.14 (10), p.S560-S560

2019

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Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Plasma-assisted molecular-beam epitaxy of AlN(112¯2) on m sapphire

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

Interband and intersubband optical characterization of semipolar ( 11 2 ¯ 2 ) -oriented GaN/AlN multiple-quantum-well structures

Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN

Plasma-assisted MBE growth of (11$ bar 2 $2)-oriented GaN/AlN quantum wells on m-sapphire

P-type doping of semipolar GaN(11$ bar 2 $2) by plasma-assisted molecular-beam epitaxy

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

Room-Temperature Transport of Indirect Excitons in ( Al , Ga ) N / GaN Quantum Wells

Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE

Mg doping and its effect on the semipolar GaN ( 11 2 ¯ 2 ) growth kinetics

Earth-abundant ZnSnxGe1−xN2 alloys as potential photovoltaic absorber materials

Stranski-Krastanow growth of ( 11 2 ¯ 2 ) -oriented GaN/AlN quantum dots

Ga kinetics in plasma-assisted molecular-beam epitaxy of Ga N ( 11 2 ¯ 2 ) : Effect on the structural and optical properties

Morphology and strain of self-assembled semipolar GaN quantum dotsin ( 11 2 ¯ 2 ) AlN

Plasma-assisted molecular-beam epitaxy of Al N ( 11 2 ¯ 2 ) on m sapphire

Molecular beam epitaxy of semipolar AlN() and GaN() on m-sapphire

Interfacial structure of semipolar AIN grown on m-plane sapphire by MBE

Plasma-assisted MBE growth of (1122)-oriented GaN/AIN quantum wells on m-sapphire

Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire

P1.14-19 Exome Analysis of Patients Treated with Afatinib Reveals Genetic Variations Discriminating Extreme Responders

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