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Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate

Scientific reports, 2023-08, Vol.13 (1), p.13329-13329, Article 13329

2023

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Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2023-12, Vol.134 (24)

2023

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Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Applied physics letters, 2019-08, Vol.115 (6)

2019

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Investigating defects in InGaN based optoelectronics: from material and device perspective

Materials research express, 2023-02, Vol.10 (2), p.24004

2023

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Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Journal of applied physics, 2018-08, Vol.124 (6)

2018

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Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

International journal of RF and microwave computer-aided engineering, 2018-10, Vol.28 (8), p.e21455-n/a

2018

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Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.94001

2019

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Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application

Applied physics letters, 2007-03, Vol.90 (11)

2007

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Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

Journal of crystal growth, 2017-07, Vol.470, p.135-142

2017

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On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy

Current Applied Physics, 2017, 17(3), , pp.327-332

2017

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Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Journal of applied physics, 2024-10, Vol.136 (16)

2024

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Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal-Semiconductor-Metal Photodetectors, Based on Epitaxial GaN/Si(111)

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3649-3655

2023

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Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters

Nanotechnology, 2022-09, Vol.33 (38), p.384001

2022

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Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential

Crystal growth & design, 2023-06, Vol.23 (6), p.3935-3941

2023

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Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application

Thin solid films, 2024-10, Vol.806, p.140529, Article 140529

2024

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Performance of semi-insulating metal-semiconductor-metal GaN prototype devices as ionizing radiation detector

Journal of physics. Conference series, 2022-11, Vol.2374 (1), p.12136

2022

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A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures

Microelectronic engineering, 2019-08, Vol.216, p.111097, Article 111097

2019

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Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

Thin solid films, 2023-08, Vol.778, p.139907, Article 139907

2023

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Radio frequency power controlled Gd 2 O 3 crystal phase transition from monoclinic to cubic

Thin solid films, 2022-01, Vol.742, p.139047, Article 139047

2022

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Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic

Thin solid films, 2022-01, Vol.742, Article 139047

2022

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Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature

Applied physics letters, 2024-07, Vol.125 (4)

2024

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Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

Thin solid films, 2024-11, Vol.808, p.140559, Article 140559

2024

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Role of Ga-flux in indium incorporation and emission properties of self-assembled InGaN nanowires grown on Si (111)

Materials science in semiconductor processing, 2024-09, Vol.180, p.108561, Article 108561

2024

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Epitaxial Ge-Gd 2 O 3 on Si(111) substrate by sputtering for germanium-on-insulator applications

Thin solid films, 2021-08, Vol.731, p.138732, Article 138732

2021

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Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application

Thin solid films, 2024-03, Vol.793, p.140272, Article 140272

2024

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Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Investigating defects in InGaN based optoelectronics: from material and device perspective

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures

Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application

Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal-Semiconductor-Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters

Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential

Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application

Performance of semi-insulating metal-semiconductor-metal GaN prototype devices as ionizing radiation detector

A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures

Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

Radio frequency power controlled Gd 2 O 3 crystal phase transition from monoclinic to cubic

Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic

Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature

Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

Role of Ga-flux in indium incorporation and emission properties of self-assembled InGaN nanowires grown on Si (111)

Epitaxial Ge-Gd 2 O 3 on Si(111) substrate by sputtering for germanium-on-insulator applications

Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application

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